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參數(shù)資料
| 型號： | W7NB80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET |
| 中文描述： | N溝道800V的- 1.6ohm - 6.5A -對MOSFET的247 PowerMESH |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 88K |
| 代理商： | W7NB80 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 400 V
R
G
= 4.7
I
D
= 3 A
V
GS
= 10 V
19
9
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 640 V
R
G
= 4.7
I
D
= 6 A
V
GS
= 10 V
V
GS
= 10 V
33
11
14
47
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V
R
G
= 4.7
I
D
= 6 A
V
GS
= 10 V
11
9
16
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
6.5
26
A
A
V
SD
(
)
t
rr
I
SD
= 6 A
V
GS
= 0
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 6 A
V
DD
= 100 V
di/dt = 100 A/
μ
s
T
j
= 150
o
C
700
5.8
16.5
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area
Thermal Impedance
STW7NB80
3/8
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