參數(shù)資料
型號(hào)： W7NCF04GH31IS3JM1G
廠商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類： PROM
英文描述： FLASH 3.3V PROM MODULE, XMA50
封裝： CARD-50
文件頁(yè)數(shù)： 7/13頁(yè)
文件大?。?/td> 180K
代理商： W7NCF04GH31IS3JM1G
March 2007
Rev. 2
W7NCF-H-M1 Series
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Min
Max
Units
Notes
VIL
Input LOW Voltage
-0.3
+0.8
V
VIH
Input HIGH Voltage
2.0
VCC+0.3
V
VOL
Output LOW Voltage
0.45
V
at 4mA
VOH
Output HIGH Voltage
2.4
V
at 4mA
ICC
Operating Current, VCC_R=5.0V
Sleep Mode
0.2
mA
Operating, 20 MHz
30
mA
ICC
Operating Current, VCC_R=3.3V
Sleep Mode
0.2
mA
Operating, 20 MHz
30
mA
ILI
Input Leakage Current
±10
μA
ILO
Output Leakage Current
±10
μA
Attribute Memory Read and Write AC Characteristics
VCC = 5V ± 0.5V, 3.3 V ±0.3V
Symbol
Parameter
Min
Max
Units
tcR
Read Cycle Time
250
ns
ta(A)
Address Access Time
250
ns
ta(CE)
Card Enable Access Time
250
ns
ta(OE)
Output Enable Access Time
125
ns
tdis(CE)
Output Disable time from CE
100
ns
tdis(OE)
Output Disable time from OE
100
ns
ten(CE)
Output Enable time from CE
5
ns
ten(OE)
Output Enable time from OE
5
ns
tV(A)
Data valid time from address change
0
ns
tsu(A)
Address Setup Time
30
ns
th(A)
Address Hold Time
20
ns
tsu(CE)
Card Enable Setup Time
2
ns
th(CE)
Card Enable Hold Time
20
ns
tcW
Write Cycle Time
250
ns
tw(WE)
Write Pulse TIme
150
ns
tsu(A-WEH)
Address setup time for WE
180
ns
tsu(CE-WEH)
Card Enable setup time for WE
180
ns
tsu(D-WEH)
Data setup time for WE
80
ns
th(D)
Data hold time
30
ns
tdis(WE)
Output disable time from WE
ns
ten(WE)
Output enable time from WE
5
100
ns
tsu(OE-WE)
Output Enable setup time for WE
10
ns
th(OE-WE)
Output Enable hold time from WE
10
ns
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