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參數(shù)資料
| 型號： | W9425G6EH-5I |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, TSOP2-66 |
| 文件頁數(shù)： | 13/54頁 |
| 文件大?。?/td> | 0K |
| 代理商： | W9425G6EH-5I |
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W9425G6EH
Publication Release Date:Dec. 03, 2008
- 20 -
Revision A08
Function Truth Table, continued
CURRENT
STATE
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
H
X
AREF/SELF
ILLEGAL
Read with
Auto-
precharge
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
Write with
Auto-
precharge
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP-> Idle after tRP
L
H
X
NOP
NOP-> Idle after tRP
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PREA
Idle after tRP
L
H
X
AREF/SELF
ILLEGAL
Precharging
L
Op-Code
MRS/EMRS
ILLEGAL
H
X
DSL
NOP-> Row active after tRCD
L
H
X
NOP
NOP-> Row active after tRCD
L
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
H
BA, RA
ACT
ILLEGAL
3
L
H
L
BA, A10
PRE/PREA
ILLEGAL
3
L
H
X
AREF/SELF
ILLEGAL
Row
Activating
L
Op-Code
MRS/EMRS
ILLEGAL
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PDF描述 |
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| WS512K32-45G2UM | 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68 |
| WS512K32L-45G4TM | 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W9425G6JB-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA |
| W9425G6JB-5 TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ |
| W9425G6JB-5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9425G6JB-5I TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ, IN |
| W9425G6JH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
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