參數(shù)資料
型號(hào)： W947D6HBHX6E
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 8M X 16 DDR DRAM, 5 ns, PBGA60
封裝： 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60
文件頁(yè)數(shù)： 31/60頁(yè)
文件大小： 1160K
代理商： W947D6HBHX6E
W947D6HB / W947D2HB
128Mb Mobile LPDDR
Publication Release Date:Jun,17, 2011
- 37 -
Revision A01-003
7.6.7 Random Write Cycles
Full-speed random write accesses within a page or pages can be performed as shown in figure below.
BA,Col n
BA,Col b
WRITE
NOP
CK
Command
Address
1) Dl b etc.= Data in to column b, etc.;
b’, etc.= the next Data In following Dl b, etc. according to the programmed burst order
2) Programmed burst length = 2, 4, 8 or 16 in cases shown. If burst of 4,8 or 16, burst would be truncated
3) Each WRITE command may be to any active bank and may be to the same or different devices.
WRITE
= Don't Care
DQS
DQ
DM
tDQSSmax
BA,Col a
BA,Col x
BA,Col n
BA,Col g
Di b
Di b’
Di x
Di x’
Di n
Di n’
Di a
Di a’
7.6.8 Write to Read
Data for any Write burst may be followed by a subsequent READ command.
7.6.9 Non-Interrupting Write to Read
To follow a Write without truncating the write burst, tWTR should be met as shown in the figure below.
BA,Col b
WRITE
NOP
CK
Command
Address
1) Dl b = Data in to column b
3 subsequent elements of Data In are applied in the programmed order following DI b.
2) A non-interrupted burst of 4 is shown.
3) tWTR is referenced from the positive clock edge after the last Data In pair.
4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
5) The READ and WRITE commands are to the same device but not necessarily to the same bank.
NOP
READ
= Don't Care
DQS
DQ
DM
tDQSSmax
BA,Col n
tWTR
CL=3
DI b
NOP
相關(guān)PDF資料
PDF描述
W9602BB PUSHBUTTON SWITCH, SPST, MOMENTARY, 10A, 28VDC, PANEL MOUNT-THREADED
W9605BB PUSHBUTTON SWITCH, SPST, MOMENTARY, 10A, 28VDC, PANEL MOUNT-THREADED
W9606BB PUSHBUTTON SWITCH, SPDT, MOMENTARY, 10A, 28VDC, PANEL MOUNT-THREADED
W9712G8JB-3 DDR DRAM, PBGA60
W971GG6IB-25 32M X 16 DDR DRAM, 0.4 ns, PBGA84
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W947D6HBHX6G 制造商:WINBOND 制造商全稱:Winbond 功能描述:128Mb Mobile LPDDR
W948D2FB 制造商:WINBOND 制造商全稱:Winbond 功能描述:256Mb Mobile LPDDR
W948D2FBJX5E 功能描述:IC LPDDR SDRAM 256MBIT 90VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
W948D2FBJX5ETR 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 200MHZ
W948D2FBJX5I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*