參數(shù)資料
型號(hào): W9812G21H-6I
廠商: WINBOND ELECTRONICS CORP
元件分類(lèi): DRAM
英文描述: 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
封裝: 0.400 INCH, ROHS COMPLIANT, TSOP2-86
文件頁(yè)數(shù): 29/36頁(yè)
文件大小: 1422K
代理商: W9812G21H-6I
W9812G2IH
Publication Release Date:Nov. 06, 2008
- 35 -
Revision A01
11.14 Power Down Mode
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RAa
CAa
RAa
CAx
RAa
ax0
ax1
ax2
ax3
tSB
tCKS
tSB
tCKS
Active Standby
Power Down mode
Precharge Standby
Power Down mode
Active
NOP
Precharge
NOP Active
Note: The PowerDown Mode is entered by asserting CKE "low".
All Input/Output buffers (except CKE buffers) are turned off in the Power Down mode.
When CKE goes high, command input must be No operation at next CLK rising edge.
Violating refresh requirements during power-down may result in a loss of data.
CLK
DQ
CKE
DQM
A0-A9
A11
A10
BS
WE
CAS
RAS
CS
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相關(guān)PDF資料
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