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參數(shù)資料
| 型號： | W9812G6DH-8H |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 |
| 文件頁數(shù)： | 5/44頁 |
| 文件大小： | 1221K |
| 代理商： | W9812G6DH-8H |
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W981216DH/ W9812G6DH
Publication Release Date: June 6, 2005
- 13 -
Revision A08
Notes:
(1) v = valid
x = Don’t care
L = Low Level H = High Level
(2) CKEn signal is input level when commands are provided.
CKEn-1 signal is the input level one clock cycle before the command is issued.
(3) These are state of bank designated by BS0, BS1 signals.
(4) Device state is full page burst operation.
(5) Power Down Mode can not be entered in the burst cycle.
When this command asserts in the burst cycle, device state is clock suspend mode.
12. FUNCTIONAL DESCRIPTION
12.1 Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and
initialization sequence need to be followed to guarantee the device being preconditioned to each user
specific needs.
During power up, all Vcc and VccQ pins must be ramp up simultaneously to the specified voltage
when the input signals are held in the “NOP” state. The power up voltage must not exceed VCC +0.3V
on any of the input pins or Vcc supplies. After power up, an initial pause of 200
S is required followed
by a precharge of all banks using the precharge command. To prevent data contention on the DQ bus
during power up, it is required that the DQM and CKE pins be held high during the initial pause period.
Once all banks have been precharged, the Mode Register Set Command must be issued to initialize
the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after
programming the Mode Register to ensure proper subsequent operation.
12.2 Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation.
All banks must be in a precharged state and CKE must be high at least one cycle before the Mode
Register Set Command can be issued. The Mode Register Set Command is activated by the low
signals of RAS, CAS, CS and WE at the positive edge of the clock. The address input data during this
cycle defines the parameters to be set as shown in the Mode Register Operation table. A new
command may be issued following the mode register set command once a delay equal to tRSC has
elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.
12.3 Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed.
The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate
command is applied to when the first read or write operation can begin must not be less than the RAS
to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank
Activate command can be issued to the same bank. The minimum time interval between successive
Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC).
The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice
versa) is the Bank to Bank delay time (tRRD). The maximum time that each bank can be held active is
specified as tRAS (max).
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W9812G6GH | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M X 4 BANKS X 16 BITS SDRAM |
| W9812G6GH-6 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M X 4 BANKS X 16 BITS SDRAM |
| W9812G6GH-6C | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M X 4 BANKS X 16 BITS SDRAM |
| W9812G6GH-6I | 制造商:WINBOND 制造商全稱:Winbond 功能描述:2M X 4 BANKS X 16 BITS SDRAM |
| W9812G6GH-75 | 制造商:Winbond Electronics Corp 功能描述:8M * 16 SDRAM |
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