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參數(shù)資料
| 型號： | WE128K32-120G2UM |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | PROM |
| 英文描述： | 128K X 32 EEPROM 5V MODULE, 120 ns, CQFP68 |
| 封裝： | 22.40 MM, CERAMIC, LQFP-68 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大小： | 347K |
| 代理商： | WE128K32-120G2UM |
6
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WE128K32-XXX
White Electronic Designs
READ
The WE128K32-XXX stores data at the memory
location determined by the address pins. When CS
and OE are low and WE is high, this data is
present on the outputs. When CS and OE are
high, the outputs are in a high impedance state.
This two line control prevents bus contention.
AC READ CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
READ WAVEFORMS
OE may be delayed up to tACS - tOE after
the falling edge of CS without impact on
tOE or by tACC - tOE after an address
change without impact on tACC.
ReadCycleParameter
Symbol
-120
-140
-150
-200
-250
-300
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
ReadCycleTime
tRC
120
140
150
200
250
300
ns
AddressAccessTime
tACC
120
140
150
200
250
300
ns
ChipSelectAccessTime
tACS
120
140
150
200
250
300
ns
OutputHoldfromAdd.Change,OEorCS
tOH
0
00000
ns
OutputEnabletoOutputValid
tOE
0
50
0
55
0
55
0
55
0
85
0
85
ns
Chip Select or OE to High Z Output
tDF
70
ns
CS1-4
FIG. 7
NOTES:
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