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參數(shù)資料
| 型號： | WE128K8200CIA |
| 元件分類： | PROM |
| 英文描述： | 128K X 8 EEPROM 5V MODULE, 200 ns, CDIP32 |
| 封裝： | SINGLE CAVITY, CERAMIC, DIP-32 |
| 文件頁數(shù)： | 13/13頁 |
| 文件大?。?/td> | 133K |
| 代理商： | WE128K8200CIA |
White Microelectronics Phoenix, AZ (602) 437-1520
10
EEPROM
MODULES
9
WE512K8, WE256K8, WE128K8-XCX
PAGE WRITE OPERATION
These devices have a page write operation that allows one to
64 bytes of data (one to 128 bytes for the WE512K8) to be
written into the device and then simultaneously written during
the internal programming period. Successive bytes may be
loaded in the same manner after the first data byte has been
loaded. An internal timer begins a time out operation at each
write cycle. If another write cycle is completed within 150
s or
less, a new time out period begins. Each write cycle restarts
the delay period. The write cycles can be continued as long as
the interval is less than the time out period.
The usual procedure is to increment the least significant
address lines from A0 through A5 (A0 through A6 for the
WE512K8) at each write cycle. In this manner a page of up to
64 bytes (128 bytes for the WE512K8) can be loaded into the
EEPROM in a burst mode before beginning the relatively long
interval programming cycle.
After the 150
s time out is completed, the EEPROM begins an
internal write cycle. During this cycle the entire page of bytes
will be written at the same time. The internal programming
cycle is the same regardless of the number of bytes accessed.
The page address must be the same for each byte load and
must be valid during each high to low transition of WE (or CS).
The block address also must be the same for each byte load
and must remain valid throughout the WE (or CS) low pulse.
The page and block address lines are summarized below:
PAGE MODE CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
FIG. 9
PAGE WRITE WAVEFORMS
Parameter
Symbol
Min
Max
Unit
Write Cycle Time, TYP = 6mS
tWC
10
ms
Data Set-up Time
tDS
100
ns
Data Hold Time
tDH
10
ns
Write Pulse Width
tWP
150
ns
Byte Load Cycle Time
tBLC
150
s
Write Pulse Width High
tWPH
50
ns
Device
Block Address
Page Address
WE512K8-XCX
A17-A18
A7-A16
WE256K8-XCX
A15-A17
A6-A14
WE128K8-XCX
A15-A16
A6-A14
NOTE:
1. Decoded Address Lines must be valid for the duration of the write.
OE
CS
WE
ADDRESS (1)
DATA
BYTE 0
BYTE 1
BYTE 2
BYTE 3
BYTE n
BYTE n + 1
VALID DATA
VALID
ADDRESS
t WC
t BLC
t WPH
t WP
t DH
t DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WE512K8250CCA | 512K X 8 EEPROM 5V MODULE, 250 ns, CDIP32 |
| WE128K32-120G4QA | 128K X 32 EEPROM 5V MODULE, 120 ns, CQFP68 |
| WE128K32-140G2TM | 128K X 32 EEPROM 5V MODULE, 140 ns, CQFP68 |
| WE128K32N-300H1CA | 128K X 32 EEPROM 5V MODULE, 300 ns, CPGA66 |
| WE128K32N-120H1IA | 128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WE128K8-200CIA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE128K8-200CM | 制造商:Microsemi Corporation 功能描述:128K X 8 EEPROM MODULE, 200NS, 32 DIP, MIL-SCREENED - Bulk |
| WE128K8-200CMA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE128K8-200CQ | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE128K8-200CQA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
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