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參數(shù)資料
| 型號(hào)： | WE256K8150CI |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | PROM |
| 英文描述： | 256K X 8 EEPROM 5V MODULE, 150 ns, CDIP32 |
| 封裝： | HERMETIC SEALED, DUAL CAVITY, BOTTOM BRAZED, CERAMIC, DIP-32 |
| 文件頁數(shù)： | 13/13頁 |
| 文件大?。?/td> | 678K |
| 代理商： | WE256K8150CI |
WE512K8, WE256K8,
WE128K8-XCX
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2007
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PAGE MODE CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Min
Max
Unit
Write Cycle Time, TYP = 6mS
tWC
10
ms
Data Set-up Time
tDS
100
ns
Data Hold Time
tDH
10
ns
Write Pulse Width
tWP
150
ns
Byte Load Cycle Time
tBLC
150
μs
Write Pulse Width High
tWPH
50
ns
Device
Block Address
Page Address
WE512K8-XCX
A17-A18
A7-A16
WE256K8-XCX
A15-A17
A6-A14
WE128K8-XCX
A15-A16
A6-A14
PAGE WRITE OPERATION
These devices have a page write operation that allows one
to 64 bytes of data (one to 128 bytes for the WE512K8) to
be written into the device and then simultaneously written
during the internal programming period. Successive bytes
may be loaded in the same manner after the rst data
byte has been loaded. An internal timer begins a time
out operation at each write cycle. If another write cycle
is completed within 150μs or less, a new time out period
begins. Each write cycle restarts the delay period. The write
cycles can be continued as long as the interval is less than
the time out period.
The usual procedure is to increment the least signicant
address lines from A0 through A5 (A0 through A6 for the
WE512K8) at each write cycle. In this manner a page of
up to 64 bytes (128 bytes for the WE512K8) can be loaded
into the EEPROM in a burst mode before beginning the
relatively long interval programming cycle.
After the 150μs time out is completed, the EEPROM
begins an internal write cycle. During this cycle the entire
page of bytes will be written at the same time. The internal
programming cycle is the same regardless of the number
of bytes accessed.
FIGURE 9 – PAGE WRITE WAVEFORMS
NOTE:
1. Decoded Address Lines must be valid for the duration of the write.
OE#
ADDRESS (1)
CS#
WE#
DATA
The page address must be the same for each byte load
and must be valid during each high to low transition of
WE# (or CS#). The block address also must be the same
for each byte load and must remain valid throughout the
WE# (or CS#) low pulse. The page and block address
lines are summarized below:
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WF128K64-60G4WC5A | 1M X 8 FLASH 5V PROM MODULE, 60 ns, CQFP116 |
| WS256K64-35G4WCA | 1M X 16 MULTI DEVICE SRAM MODULE, 35 ns, CQMA116 |
| WMS128K8-35DEM | 128K X 8 STANDARD SRAM, 35 ns, CDSO32 |
| WMS128K8-20FCA | 128K X 8 STANDARD SRAM, 20 ns, CDFP36 |
| WMS128K8-20FECA | 128K X 8 STANDARD SRAM, 20 ns, CDFP32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WE256K8-150CI | 制造商:Microsemi Corporation 功能描述:256K X 8 EEPROM MODULE, 150NS, 32 DIP, INDUSTRIAL SCREENED - Bulk |
| WE256K8-150CIA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE256K8-150CM | 制造商:White Electronic Designs 功能描述:Res Thin Film 0603 2.8K Ohm 0.1% 1/16W ±50ppm/°C Molded SMD Paper T/R 制造商:Microsemi Corporation 功能描述:256K X 8 EEPROM MODULE, 150NS, 32 DIP, MIL-SCREENED - Bulk |
| WE256K8-150CMA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE256K8-150CQ | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
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