參數(shù)資料
型號: WED2ZL361MSJ38BI
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: SRAM
英文描述: 1M X 36 MULTI DEVICE SRAM MODULE, 3.8 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 7/12頁
文件大小: 0K
代理商: WED2ZL361MSJ38BI
4
White Electronic Designs Corporation Westborough MA (508) 366-5151
WED2ZL361MSJ
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD Supply Relative to VSS
-0.3V to +3.6V
VIN (DQx)
-0.3V to +3.6V
VIN (Inputs)
-0.3V to +3.6V
Storage Temperature (BGA)
-55°C to +125°C
Shor t Circuit Output Current
100mA
RECOMMENDED DC OPERATING CONDITIONS
(VOLTAGE REFERENCED TO: VSS = OV, TA = 0°C TO 70°C; COMMERCIAL OR TA = -40°C TO +85°C; INDUSTRIAL)
*
Stress greater than those listed under “Absolute Maximum Ratings: may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condtions for extended periods may affect reliability.
Description
Symbol
Conditions
Min
Max
Units
Notes
Input High (Logic 1) Voltage
VIH
1.7
VDD +0.3
V
1
Input Low (Logic 0) Voltage
VIL
-0.3
0.7
V
1
Input Leakage Current
ILI
0V
VIN VDD
-5
5
A
2
Output Leakage Current
ILO
Output(s) Disabled, 0V
VIN VDD
-5
5
A
Output High Voltage
VOH
IOH = -1.0mA
2.0
---
V
1
Output Low Voltage
VOL
IOL = 1.0mA
---
0.4
V
1
Supply Voltage
VDD
2.375
2.625
V
1
NOTES:
1. All voltages referenced to VSS (GND)
2. ZZ pin has an internal pull-up, and input leakage is higher.
DC CHARACTERISTICS
NOTES:
1.
IDD is specified with no output current and increases with faster cycle times.
IDD increases with faster cycle times and greater output loading.
2.
Typical values are measured at 2.5V, 25°C, and 10ns cycle time.
BGA CAPACITANCE
NOTE:
1. This parameter is sampled.
Description
Symbol
Conditions
Typ
Max
Units
Notes
Control Input Capacitance
CI
TA = 25°C; f = 1MHz
5
7
pF
1
Input/Output Capacitance (DQ)
CO
TA = 25°C; f = 1MHz
6
8
pF
1
Address Capacitance
CA
TA = 25°C; f = 1MHz
5
7
pF
1
Clock Capacitance
CCK
TA = 25°C; f = 1MHz
3
5
pF
1
250 200 166 133
Description
Symbol Conditions
Typ MHz MHz MHz MHz Units Notes
Power Supply
IDD
Device Selected; All Inputs
VIL or VIH; Cycle
900
800
690
580
mA
1, 2
Current: Operating
Time = TCYC MIN; VDD = MAX; Output Open
Power Supply
ISB2
Device Deselected; VDD = MAX; All Inputs
30
60
mA
2
Current: Standby
VSS + 0.2 or VDD - 0.2; All Inputs Static;
CLK Frequency = 0; ZZ
VIL
Power Supply
ISB3
Device Selected; All Inputs
VIL or VIH; Cycle
20
40
mA
2
Current: Current
Time = TCYC MIN; VDD = MAX; Output Open;
ZZ
VDD - 0.2V
Clock Running
ISB4
Device Deselected; VDD = MAX; All Inputs
150
140
130
100
mA
2
Standby Current
VSS + 0.2 or VDD - 0.2; Cycle Time = TCYC
MIN; ZZ
VIL
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