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參數(shù)資料
| 型號(hào)： | WED3DG6366V7D2F |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | SYNCHRONOUS DRAM MODULE, DMA168 |
| 封裝： | LEAD FREE, DIMM-144 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 169K |
| 代理商： | WED3DG6366V7D2F |
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WED3DG6466V-D2
May 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
AC FUNCTIONAL CHARACTERISTICS
VCC, VCCQ = +3.3V ±0.3V
PARAMETER
SYMBOL
7
7.5
10
UNITS
NOTES
READ/WRITE command to READ/WRITE command
tCCD
111
tCK
17
CKE to clock disable or power-down entry mode
tCKED
111
tCK
14
CKE to clock enable or power-down exit setup mode
tPED
111
tCK
14
DQM to input data delay
tDQD
000
tCK
17
DQM to data mask during WRITEs
tDQM
000
tCK
17
DQMto data high-impedance during READs
tDQZ
222
tCK
17
WRITE command to input data delay
tDWD
000
tCK
17
Data-into ACTIVE command
tDAL
455
tCK
15, 21
Data-into PRECHARGE command
tDPL
222
tCK
16, 21
Last data-in to burst STOP command
tBDL
111
tCK
17
Last data-in to new READ/WRITE command
tCDL
111
tCK
17
Lastdata-into PRECHARGE command
tRDL
222
tCK
16, 21
LOADMODEREGISTER command to ACTIVE or REFRESH command
tMRD
222
tCK
26
Data-out to high-impedance from PRECHARGE command
CL = 3
tROH(3)
333
tCK
17
CL = 2
tROH(2)
222
tCK
17
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