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參數(shù)資料
| 型號(hào)： | WED3DG6465V10D2I |
| 廠(chǎng)商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 465K |
| 代理商： | WED3DG6465V10D2I |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WED3DG6465V-D2
June, 2003
Rev. # 1
FINAL
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Storage Temperature
TSTG
-55 ~ +150
°C
Power Dissipation
PD
8
W
Short Circuit Current
IOS
50
mA
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: VSS = 0V, TA = 0°C
≤ +70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply Voltage
VDD
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input Low Voltage
VIL
-0.3
—
0.8
V
2
Output High Voltage
VOH
2.4
—
V
IOH= -2mA
Output Low Voltage
VOL
—
0.4
V
IOL= -2mA
Input Leakage Current
ILI
-10
—
10
A
3
Note:
1. VIH (max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(TA = 23°C, f = 1MHz, VDD = 3.3V, VREF=1.4V ± 200mV)
Parameter
Symbol
Min
Max
Unit
Input Capacitance (A0-A12)
CIN1
-
45
pF
Input Capacitance (RAS#,CAS#,WE#)
CIN2
-
45
pF
Input Capacitance (CKE0)
CIN3
-
25
pF
Input Capacitance (CK0, CK2)
CIN4
-
13
pF
Input Capacitance (CS0#,CS2#)
CIN5
-
15
pF
Input Capacitance (DQM0-DQM7)
CIN6
-
10
pF
Input Capacitance (BA0-BA1)
CIN7
-
45
pF
Data input/output capacitance (DQ0-DQ63)
COUT
-
12
pF
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| WED3DG6465V-D1 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:SDRAM Modules - 144 Pin SO-DIMM. Unbuffered |
| WED3DG6465V-D2 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:SDRAM Modules - 168 Pin DIMM. Unbuffered |
| WED3DG6466V10AD1 | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512MB - 64Mx64 SDRAM UNBUFFERED |
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| WED3DG6466V10D2 | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512MB -64Mx64, SDRAM UNBUFFERED |
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