參數(shù)資料
型號: WED3DG648V10D1
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 8M X 64 SYNCHRONOUS DRAM MODULE, DMA144
封裝: SODIMM-144
文件頁數(shù): 4/6頁
文件大?。?/td> 452K
代理商: WED3DG648V10D1
4
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
Sept. 2002 Rev. 0
ECO #15457
WED3DG648V-D1
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C to +70°C)
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VssQ)
1 Bank Version
Parameter
Symbol
Conditions
133
100
Units Note
Operating Current
ICC1
Burst Length = 1
460
400
mA
1
(One bank active)
tRC tRC(min)
IOL = 0mA
Precharge Standby Current
ICC2P
CKE VIL(max), tCC = 10ns
5
mA
in Power Down Mode
ICC2PS
CKE & CLK VIL(max), tCC =
5
Icc2N
CKE VIH(min), CS VIH(min), tcc = 10ns
Precharge Standby Current
Input signals are charged one time during 20
60
in Non-Power Down Mode
Icc2NS
CKE VIH(min), CLK VIL(max), tcc =
mA
Input signals are stable
30
Active standby current in
ICC3P
CKE VIL(max), tCC = 10ns
15
mA
power-down mode
ICC3PS
CKE & CLK VIL(max), tcc =
15
ICC3N
CKE VIH(min), CS VIH(min), tcc = 10ns
Active standby current in
Input signals are changed one time during 20ns
110
mA
non power-down mode
ICC3NS
CKE VIH(min), CLK VIL(max), tcc =
input signals are stable
80
mA
Io = mA
Operating current (Burst mode)
ICC4
Page burst
560
440
mA
1
4 Banks activated
tCCD = 2CLK
Refresh current
ICC5
tRC tRC(min)
560
500
mA
2
Self refresh current
ICC6
CKE 0.2V
10
mA
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