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參數(shù)資料
| 型號(hào)： | WED3EG7218S265JD3 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 217K |
| 代理商： | WED3EG7218S265JD3 |
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED3EG7218S-D3
-JD3
November 2005
Rev. 1
PRELIMINARY
Parameter
Symbol
Conditions
DDR266@CL=2
Max
DDR266@CL=2.5
Max
DDR200@CL=2
Max
Units
Operating Current
ICC0
One device bank; Active = Precharge;
TRC=TRC(MIN); TCK=TCK(MIN); DQ,DM and
DQS inputs changing once per clock cycle;
Address and control inputs changing once
every two cycles
990
810
mA
Operating Current
ICC1
One device bank; Active-read-Precharge;
Burst = 2; TRC=TRC(MIN); TCK=TCK(MIN);
lout=0mA; Address and control inputs
changing once per clock cycle
1260
1035
mA
Precharge Power-Down
Standby Current
ICC2P
All device banks idle; Power-down mode;
TCK=TCK(MIN); CKE=(low)
270
255
mA
Idle Standby Current
ICC2F
CS# = High; All device banks idle;
TCK=TCK(MIN); CKE=high; Address and other
control inputs changing once per clock cycle.
VIN = VREF for DQ, DQS and DM.
495
405
mA
Active Power-Down
Standby Current
ICC3P
One device bank active; Power-down mode;
TCK(MIN); CKE=(low)
315
270
mA
Active Standby Current
ICC3N
CS# = High; CKE = High; One device bank;
Active-Precharge; TRC = TRAS(MAX); TCK =
TCK(MIN); DQ, DM and DQS inputs changing
twice per clock cycle; Address and other
control inputs changing once per clock cycle.
540
450
mA
Operating Current
ICC4R
Burst = 2; Reads; Continous burst; One
device bank active; Address and control inputs
changing once per clock cycle;
TCK = TCK(MIN); lout = 0mA
1800
1485
mA
Operating Current
ICC4W
Burst = 2; Writes; Continous burst; One
device bank active; Address and control
inputs changing once per clock cycle; TCK =
TCK(MIN); DQ, DM and DQS inputs changing
twice per clock cycle.
1935
1530
mA
Auto Refresh Current
ICC5
TRC = TRC(MIN)
1935
1530
mA
Self Refresh Current
ICC6
CKE
≤ 0.2V
Standard
18
mA
Low Power
9
Operating Current
ICC7A
Four bank interleaving Reads (BL = 4) with
auto precharge with TRC = TRC(MIN);
TCK = TCK(MIN); Address and control inputs
change only during Active Read or Write
commands.
4320
3780
mA
ICC SPECIFICATIONS AND TEST CONDITIONS
0°C
≤ TA ≤ 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WED3EG7218S-JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128MB - 16Mx72 DDR SDRAM UNBUFFERED |
| WED3EG72256SXX-JD3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DDR SDRAM Modules - 184 Pin DIMM. Registered 72-bit wide |
| WED3EG7232S-JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx72 DDR SDRAM UNBUFFERED |
| WED3EG7233S202D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 2x16Mx72 DDR SDRAM UNBUFFERED |
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