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參數(shù)資料
| 型號： | WEDPN8M64VR-100BC |
| 元件分類： | DRAM |
| 英文描述： | 8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, PBGA219 |
| 封裝： | PLASTIC, BGA-219 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 314K |
| 代理商： | WEDPN8M64VR-100BC |
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPN8M64VR-XBX
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (Notes 1, 6)
(VCC = +3.3V
±0.3V; TA = -55°C to +125°C)
Parameter/Condition
Symbol
Units
Min
Max
Supply Voltage
VCC
3
3.6
V
Input High Voltage: Logic 1; All inputs (21)
VIH
2VCC + 0.3
V
Input Low Voltage: Logic 0; All inputs (21)
VIL
-0.3
0.8
V
Input Leakage Current: Any input 0V
≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-5
5
A
Output Leakage Current: I/Os are disabled; 0V
≤ VOUT ≤ VCC
IOZ
-5
5
A
Output Levels:
Output High Voltage (IOUT = -4mA)
VOH
2.4
–
V
Output Low Voltage (IOUT = 4mA)
VOL
–
0.4
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Unit
Voltage on VDD, VDDQ Supply relative to Vss
-1 to 4.6
V
Voltage on NC or I/O pins relative to Vss
-1 to 4.6
V
Operating Temperature TA (Mil)
-55 to +125
°C
Operating Temperature TA (Ind)
-40 to +85
°C
Storage Temperature, Plastic
-55 to +150
°C
Power Dissipation
4
W
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional opera-
tion of the device at these or any other conditions greater than those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE (Note 2)
Parameter
Symbol
Max
Unit
Input Capacitance: CLK
CI1
10
pF
Addresses, BA0-1 Input Capacitance
CA
10
pF
Input Capacitance: All other input-only pins
CI2
10
pF
Input/Output Capacitance: I/Os
CIO
12
pF
ICC SPECIFICATIONS AND CONDITIONS (Notes 1,6,11,13)
(VCC = +3.3V
±0.3V; TA = -55°C to +125°C)
Parameter/Condition
Symbol
Max
Units
Operating Current: Active Mode;
ICC1
600
mA
Burst = 2; Read or Write; tRC = tRC (min); CAS latency = 3 (3, 18, 19)
Standby Current: Active Mode; CKE = HIGH; CS = HIGH;
ICC3
200
mA
All banks active after tRCD met; No accesses in progress (3, 12, 19)
Operating Current: Burst Mode; Continuous burst;
ICC4
600
mA
Read or Write; All banks active; CAS latency = 3 (3, 18, 19)
Self Refresh Current: CKE
≤ 0.2V (27)
ICC7
10
mA
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相關代理商/技術參數(shù) |
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| WEDPN8M64VR-XBX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Registered SDRAM MCP |
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