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參數(shù)資料
| 型號(hào)： | WF128K32-90G2M5A |
| 英文描述： | x32 Flash EEPROM Module |
| 中文描述： | X32號(hào)，閃存EEPROM模塊 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大小： | 431K |
| 代理商： | WF128K32-90G2M5A |
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
1. Stresses above the absolute maximum rating may cause permanent damage to
the device. Extended operation at the maximum evels may degrade
performance and affect reliability.
2. Minimum DC voltage on nput or /O pins s -0.5V During voltage transitions,
inputs may overshoot Vss to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and /O pins s Vcc + 0.5V During voltage transitions, outputs
may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC nput voltage on A9 pin s -0.5V During voltage transitions, A9
may overshoot Vss to -2V for periods of up to 20ns. Maximum DC nput voltage
on A9 s +13.5V which may overshoot to 14.0 V for periods up to 20ns.
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55°C TO +125°C)
1. The CC current isted ncludes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically s ess than 2 mA/MHz, with OE at VIH.
2. CC active while Embedded Algorithm (program or erase) s n progress.
3. DC test conditions: VIL = 0.3V VIH = VCC - 0.3V
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
A
9
Voltage for Sector Protect
V
CC
V
IH
V
IL
T
A
V
ID
4.5
2.0
-0.5
-55
11.5
5.5
V
V
V
°C
V
V
CC
+ 0.3
+0.8
+125
12.5
Operating Temperature
Supply Voltage Range (V
CC
)
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance (write/erase cycles) Mil Temp
A
9
Voltage for sector protect (V
ID
) (3)
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
10 years
10,000 cycles min.
-2.0 to +14.0
°C
V
V
°C
°C
V
Input Leakage Current
I
LI
V
CC
= 5.5, V
IN
= GND to V
CC
10
μA
Output Leakage Current
I
LOx32
V
CC
= 5.5, V
IN
= GND to V
CC
10
μA
V
CC
Active Current for Read
(1)
I
CC1
CS = V
IL
, OE = V
IH
140
mA
V
CC
Active Current for Program
or Erase
(2)
I
CC2
CS = V
IL
, OE = V
IH
200
mA
V
CC
Standby Current
I
CC3
V
CC
= 5.5, CS = V
IH
, f = 5MHz
6.5
mA
V
CC
Static Current
I
CC4
V
CC
= 5.5, CS = V
IH
0.6
mA
Output Low Voltage
V
OL
I
OL
= 8.0 mA, V
CC
= 4.5
0.45
V
Output High Voltage
V
OH1
I
OH
= -2.5 mA, V
CC
= 4.5
0.85 x
V
CC
V
CC
-0.4
V
Output High Voltage
V
OH2
I
OH
= -100 μA, V
CC
= 4.5
V
Low V
CC
Lock Out Voltage
V
LKO
3.2
V
OE capacitance
C
OE
V
IN
= 0 V, f = 1.0 MHz
50
pF
WE
1-4
capacitance
HIP (PGA)
CQFP G2U/G1U/G1T
CS
1-4
capacitance
C
WE
V
IN
= 0 V, f = 1.0 MHz
pF
20
15
20
C
CS
V
IN
= 0 V, f = 1.0 MHz
pF
Data I/O capacitance
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
20
pF
Address nput capacitance
C
AD
V
IN
= 0 V, f = 1.0 MHz
50
pF
This parameter s guaranteed by design but not tested.
(T
A
= +25oC)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WF128K32-90G2Q5 | EEPROM |
| WF128K32-90G2Q5A | EEPROM |
| WF128K32-90G2UC5 | EEPROM|FLASH|128KX32|CMOS|QFP|68PIN|CERAMIC |
| WF128K32-90G2UC5A | x32 Flash EEPROM Module |
| WF128K32-90G2UI5 | EEPROM|FLASH|128KX32|CMOS|QFP|68PIN|CERAMIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WF128K32-90G2Q5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| WF128K32-90G2Q5A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| WF128K32-90G2UC5 | 制造商:Microsemi Corporation 功能描述:128K X 32 FLASH MODULE, 5V, 90NS, 68 CQFP 0.88" SQ., 0.140" - Bulk |
| WF128K32-90G2UC5A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Flash EEPROM Module |
| WF128K32-90G2UI5 | 制造商:Microsemi Corporation 功能描述:128K X 32 FLASH MODULE, 5V, 90NS, 68 CQFP 0.88" SQ., 0.140" - Bulk |
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