- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄245662 > WF1M32B-100G2TM3 1M X 32 FLASH 3.3V PROM MODULE, 100 ns, CQFP68 PDF資料下載
參數(shù)資料
| 型號(hào)： | WF1M32B-100G2TM3 |
| 元件分類： | PROM |
| 英文描述： | 1M X 32 FLASH 3.3V PROM MODULE, 100 ns, CQFP68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大小： | 159K |
| 代理商： | WF1M32B-100G2TM3 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF1M32B-XXX3
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
Parameter
Unit
Operating Temperature
-55 to +125
°C
Supply Voltage Range (VCC)
-0.5 to +4.0
V
Signal Voltage Range
-0.5 to Vcc +0.5
V
Storage Temperature Range
-65 to +150
°C
Lead Temperature (soldering, 10 seconds)
+300
°C
Endurance (write/erase cycles)
1,000,000 min.
cycles
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
0.7 x Vcc
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
20
pF
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 3.6, VIN = GND or VCC
10
A
Output Leakage Current
ILOx32
VCC = 3.6, VIN = GND or VCC
10
A
VCC Active Current for Read (1)
ICC1
CS = VIL, OE = VIH, f = 5MHz
120
mA
VCC Active Current for Program or Erase (2)
ICC2
CS = VIL, OE = VIH
140
mA
VCC Standby Current
ICC3
VCC = 3.6, CS = VIH, f = 5MHz
200
A
Output Low Voltage
VOL
IOL = 5.8 mA, VCC = 3.0
0.45
V
Output High Voltage
VOH1
IOH = -2.0 mA, VCC = 3.0
0.85 X VCC
V
Low VCC Lock-Out Voltage (4)
VLKO
2.3
2.5
V
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 3.3V, VSS = 0V, TA = -55
°C to +125°C)
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically
is less than 8 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
4. Guaranteed by design, but not tested.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data
150
°C
10
Years
Retention Time
125
°C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WS512K32N-20H1IA | 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CHIP66 |
| WS512K32N-55H1QA | 512K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CHIP66 |
| WS512K32-20G4TQA | 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 |
| WS512K32L-15G2TCA | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 |
| WS512K32L-25G4TQ | 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WF1M32B-100G2TM3A | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1Mx32 3.3V Flash Module |
| WF1M32B-100G2TM5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Flash EEPROM Module |
| WF1M32B-100G2TM5A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Flash EEPROM Module |
| WF1M32B-100G2UI3 | 制造商:White Electronic Designs 功能描述:Flash Module Parallel 32Mbit 制造商:Microsemi Corporation 功能描述:1M X 32 FLASH MODULE, 3.3V, 100NS - Bulk 制造商:White Electronic Designs 功能描述:1M X 32 FLASH MODULE, 3.3V, 100NS - Bulk |
| WF1M32B-100HC3 | 制造商:Microsemi Corporation 功能描述:1M X 32 FLASH MODULE, 3.3V, 100NS, BOOT BLOCK, 66 PGA 1.185" - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。