- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄140433 > WF2M32-90G2UE5 (MICROSEMI CORP-PMG MICROELECTRONICS) 2M X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68 PDF資料下載
參數(shù)資料
| 型號： | WF2M32-90G2UE5 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 2M X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68 |
| 封裝： | 22.40 X 22.40 MM, 3.56 MM HEIGHT, HERMATIC SEALED, CERAMIC, QFP-68 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 213K |
| 代理商： | WF2M32-90G2UE5 |
5
White Electronic Designs Corporation (602) 437-1520
White Electronic Designs
WF2M32-XXX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) (Note 5)
FIG. 3
AC TEST CIRCUIT
AC TEST CONDITIONS
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 .
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Typ
Unit
InputPulseLevels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
InputandOutputReferenceLevel
1.5
V
Output Timing Reference Level
1.5
V
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
Parameter
Symbol
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tWC
90
120
150
ns
Write Enable Setup Time
tWLEL
tWS
000
ns
Chip Select Pulse Width
tELEH
tCP
45
50
ns
Address Setup Time
tAVEL
tAS
000
ns
Data Setup Time
tDVEH
tDS
45
50
ns
Data Hold Time
tEHDX
tDH
000
ns
Address Hold Time
tELAX
tAH
45
50
ns
Chip Select Pulse Width High
tEHEL
tCPH
20
ns
Duration of Byte Programming Operation (1)
tWHWH1
300
s
Sector Erase Time (2)
tWHWH2
15
sec
ReadRecoveryTime
tGHEL
000
s
Chip Programming Time
44
sec
Chip Erase Time (3)
256
sec
Output Enable Hold Time (4)
tOEH
10
ns
NOTES:
1.
Typical value for tWHWH1 is 7s.
2.
Typical value for tWHWH2 is 1sec.
3.
Typical value for Chip Erase Time is 32sec.
4.
For Toggle and Data Polling.
5.
Extended temperature devices are fully operational from -55°C to +100°C. Operation above 100°C to 125°C is limited to read-only operation.
FIG. 4
RESETTIMINGDIAGRAM
RESET
tRP
tReady
相關PDF資料 |
PDF描述 |
|---|---|
| WMS512K8V-15DEM | 512K X 8 STANDARD SRAM, 15 ns, CDSO32 |
| WMS512K8V-17FM | 512K X 8 STANDARD SRAM, 17 ns, CDFP36 |
| WV3HG232M64EEU665D4M | 64M X 64 DDR DRAM MODULE, 0.45 ns, DMA200 |
| WV3HG64M32EEU665D4ISG | 64M X 32 DDR DRAM MODULE, 0.45 ns, ZMA200 |
| WS512K32L-17G1UQ | 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WF2M32-90G2UI5 | 制造商:Microsemi Corporation 功能描述:2M X 32 FLASH MODULE, 5V, 90NS, 68 CQFP 0.88" SQ., 0.140" HI - Bulk |
| WF2M32-90G2UM5 | 制造商:White Electronic Designs 功能描述:NOR FLASH MODULE 制造商:Microsemi Corporation 功能描述:2M X 32 FLASH MODULE, 5V, 90NS, 68 CQFP 0.88" SQ., 0.140" HI - Bulk |
| WF2M32-90G4TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Flash EEPROM Module |
| WF2M32-90G4TI5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Flash EEPROM Module |
| WF2M32-90G4TM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Flash EEPROM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復。