參數(shù)資料
型號: WF4M32-120G4TC5
元件分類: PROM
英文描述: 4M X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
封裝: CERAMIC, LQFP-68
文件頁數(shù): 12/15頁
文件大?。?/td> 233K
代理商: WF4M32-120G4TC5
6
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF4M32-XXX5
AC CHARACTERISTICS for G4T and H2 Packages – WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(VCC = 5.0V, TA = -55
°C to +125°C)
Parameter
Symbol
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tWC
100
120
150
ns
Chip Select Setup Time
tELWL
tCS
00
0
ns
Write Enable Pulse Width
tWLWH
tWP
45
50
ns
Address Setup Time
tAVWL
tAS
00
0
ns
Data Setup Time
tDVWH
tDS
45
50
ns
Data Hold Time
tWHDX
tDH
15
ns
Address Hold Time (1)
tWLAX
tAH
45
50
ns
Write Enable Pulse Width High (2)
tWHWL
tWPH
20
ns
Duration of Byte Programming Operation (3)
tWHWH1
300
s
Sector Erase (4)
tWHWH2
15
sec
Read Recovery Time before Write
tGHWL
00
0
s
VCC Setup Time
tVCS
50
s
Chip Programming Time
44
sec
Chip Erase Time (5)
256
sec
Output Enable Hold Time (6)
tOEH
10
ns
RESET Pulse Width
tRP
500
ns
NOTES:
1. A21 must be held constant until WE or CS go high, whichever occurs first.
2. Guaranteed by design, but not tested.
3. Typical value for tWHWH1 is 7
s.
4. Typical value for tWHWH2 is 1sec.
5. Typical value for Chip Erase Time is 32sec.
6. For Toggle and Data Polling.
AC CHARACTERISTICS for G4T and H2 Packages – READ-ONLY OPERATIONS
(VCC = 5.0V, TA = -55
°C to +125°C)
Parameter
Symbol
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
tAVAV
tRC
100
120
150
ns
Address Access Time
tAVQV
tACC
100
120
150
ns
Chip Select Access Time
tELQV
tCE
100
120
150
ns
Output Enable to Output Valid
tGLQV
tOE
50
55
ns
Chip Select High to Output High Z
tEHQZ
tDF
35
ns
Output Enable High to Output High Z
tGHQZ
tDF
35
ns
Output Hold from Addresses, CS or OE Change,
tAXQX
tOH
000
ns
whichever is First
RST Low to Read Mode
tReady
20
s
相關(guān)PDF資料
PDF描述
WF4M32-100G2TC5 4M X 32 FLASH 5V PROM MODULE, 100 ns, CQFP68
WF4M32-150G4TI5 4M X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68
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