參數(shù)資料
型號(hào): WF512K64-120G4WM5
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: PROM
英文描述: 512K X 64 FLASH 5V PROM MODULE, 120 ns, CQMA116
封裝: CERAMIC, QFP-116
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 858K
代理商: WF512K64-120G4WM5
3
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WF512K64-XG4WX5
AC CHARACTERISTICS
WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(VCC = 5.0V, V SS = 0V, T A= -55°C to +125°C)
FIG. 2
AC TEST CIRCUIT
AC TEST CONDITIONS
NOTES:
VZ is programmable from -2V to +7V.
IOL & I OH programmable from 0 to 16mA.
Tester Impedance Z
0
= 75 .
VZ is typically the midpoint of V
OH
and V
OL
.
IOL & IOH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Typ
Unit
Input Pulse Levels
V
IL
= 0, V IH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Parameter
Symbol
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t AVAV
t WC
70
90
120
150
ns
Write Enable Setup Time
t WLEL
t WS
0
ns
Chip Select Pulse Width
t ELEH
t CP
45
50
ns
Address Setup Time
t AVEL
t AS
0
ns
Data Setup Time
t DVEH
t DS
45
50
ns
Data Hold Time
t EHDX
t DH
0
ns
Address Hold Time
t ELAX
t AH
45
50
ns
Chip Select Pulse Width High
t EHEL
t CPH
20
ns
Duration of Byte Programming Operation (1)
t WHWH1
300
s
Chip and Sector Erase Time (2)
t WHWH2
15
sec
Read Recovery Time
t GHEL
0
ns
Chip Programming Time
11
sec
Chip Erase Time (3)
64
sec
NOTES:
1. Typical value for t
WHWH1
is 7s.
2. Typical value for t
WHWH1
is 1sec.
3. Typical value for Chip Erase Time is 8sec.
Page 3 of 10
WF512K64-XG4WX5
4/3/2009
http://techdatasheets.com/datasheets/517056/data-WF512K64-150G4WI5.html
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