參數(shù)資料
型號(hào): WMF128K8-60CLI5
英文描述: EEPROM|FLASH|128KX8|CMOS|LLCC|32PIN|CERAMIC
中文描述: 的EEPROM | FLASH動(dòng)畫(huà)| 128KX8 |的CMOS | LLCC | 32腳|陶瓷
文件頁(yè)數(shù): 2/14頁(yè)
文件大?。?/td> 143K
代理商: WMF128K8-60CLI5
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMF128K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is V
CC
+ 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A
9
pin is -0.5V. During voltage transitions, A
9
may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A
9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
DC CHARACTERISTICS - CMOS COMPATIBLE
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Operating Temperature
Supply Voltage Range (V
CC
)
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance (write/erase cycles) Mil Temp
A
9
Voltage for sector protect (V
ID
) (3)
Unit
°
C
V
V
°
C
°
C
years
cycles
V
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
10
10,000 min.
-2.0 to +14.0
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read
(1)
I
LI
I
LO
I
CC1
V
CC
= 5.5, V
IN
= GND to V
CC
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IL
, OE = V
IH
10
10
35
μ
A
μ
A
mA
V
CC
Active Current for Program
or Erase
(2)
V
CC
Standby Current
Output Low Voltage
Output High Voltage
Output High Voltage
Low V
CC
Lock Out Voltage
I
CC2
CS = V
IL
, OE = V
IH
50
mA
I
CC3
V
OL
V
OH1
V
OH2
V
LKO
V
CC
= 5.5, CS = V
IH
, f = 5MHz
I
OL
= 8.0 mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
I
OH
= -100
μ
A, V
CC
= 4.5
1.6
0.45
mA
V
V
V
V
0.85 x V
CC
V
CC
- 0.4
3.2
CAPACITANCE
(T
A
= +25
°
C)
Parameter
Symbol
Conditions
Max
Unit
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
This parameter is guaranteed by design but not tested.
C
AD
C
OE
C
WE
C
CS
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
15
15
15
15
15
pF
pF
pF
pF
pF
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A
9
Voltage for Sector Protect
Symbol
V
CC
V
IH
V
IL
T
A
T
A
V
ID
Min
4.5
2.0
-0.5
-55
-40
11.5
Max
5.5
Unit
V
V
V
°
C
°
C
V
V
CC
+ 0.3
+0.8
+125
+85
12.5
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
AC TEST CIRCUIT
AC TEST CONDITIONS
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
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