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參數(shù)資料
| 型號： | WMS128K8C-85DEIA |
| 元件分類： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 85 ns, CDSO32 |
| 封裝： | CERAMIC, SOJ-32 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 101K |
| 代理商： | WMS128K8C-85DEIA |
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
7
WMS128K8-XXX
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M = Military Screened
-55
°C to +125°C
I = Industrial
-40
°C to +85°C
C = Commercial
0
°C to +70°C
PACKAGE:
C = 32 Pin Ceramic .600" DIP (Package 300)
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary
DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary
FE = 32 Lead Ceramic Flat Pack (Package 206)
ACCESS TIME (ns)
IMPROVEMENT MARK
C = Dual Chip Select Device
L = Low Power for 2V Data Retention
ORGANIZATION, 128K x 8
SRAM
MONOLITHIC
WHITE MICROELECTRONICS
ORDERING INFORMATION
Parameter
Symbol
Conditions
Units
Min
Max
Data Retention Supply Voltage
VDR
CS
≥ VCC -0.2V
2.0
5.5
V
Data Retention Current
ICCDR3
VCC = 2V
400
DATA RETENTION CHARACTERISTICS
(TA = -55
°C to +125°C)
LOW POWER VERSION ONLY
W M S 128K 8 X - XXX X X X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WMS128K8L-100CCA | 128K X 8 STANDARD SRAM, 100 ns, CDIP32 |
| WS512K8-100CME | 512K X 8 MULTI DEVICE SRAM MODULE, 100 ns, CDMA32 |
| WE128K32N-200H1Q | 128K X 32 EEPROM 5V MODULE, 125 ns, CPGA66 |
| WME128K8-150CQE | 128K X 8 EEPROM 5V, 150 ns, CDIP32 |
| WME128K8-250CIEA | 128K X 8 EEPROM 5V, 250 ns, CDIP32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WMS128K8C-85DEIE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| WMS128K8C-85DEME | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| WMS128K8C-85FEIE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| WMS128K8C-85FEME | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| WMS128K8L-100CIE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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