參數(shù)資料
型號: WMS128K8L-100CCA
元件分類: SRAM
英文描述: 128K X 8 STANDARD SRAM, 100 ns, CDIP32
封裝: SIDE BRAZED, CERAMIC, DIP-32
文件頁數(shù): 2/8頁
文件大小: 101K
代理商: WMS128K8L-100CCA
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WMS128K8-XXX
Parameter
Sym
Conditions
-70
-85
-100
-120
Units
Min
Max
Min
Max
Min
Max
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
30
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
1.0
0.6
mA
Output Low Voltage
VOL
IOL = 2.1mA, Vcc = 4.5
0.4
V
Output High Voltage
VOH
IOH = -1.0mA, Vcc = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
DATA RETENTION CHARACTERISTICS
(TA = -55
°C to +125°C)
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
Parameter
Symbol
Conditions
-70
-85
-100
-120
Units
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Data Retention
Supply Voltage
VDR
CS
≥ VCC -0.2V
2.0
5.5
2.0
5.5
2.0
5.5
2.0
5.5
V
Data Retention
Current
ICCDR1
VCC = 3V
20
400
20
400
20
400
20
400
A
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Condition
Package
Speed (ns)
Max
Unit
Input capacitance
CIN
VIN = 0V, f = 1.0MHz
32 Pin CSOJ, DIP,
70 to 120
12
pF
Flat Pack Evolutionary
32 Pin CSOJ Revolutionary
70 to 120
20
pF
Output capicitance
COUT
VOUT = 0V, f = 1.0MHz
32 Pin CSOJ, DIP,
70 to 120
12
pF
Flat Pack Evolutionary
32 Pin CSOJ Revolutionary
70 to 120
20
pF
This parameter is guaranteed by design but not tested.
相關(guān)PDF資料
PDF描述
WS512K8-100CME 512K X 8 MULTI DEVICE SRAM MODULE, 100 ns, CDMA32
WE128K32N-200H1Q 128K X 32 EEPROM 5V MODULE, 125 ns, CPGA66
WME128K8-150CQE 128K X 8 EEPROM 5V, 150 ns, CDIP32
WME128K8-250CIEA 128K X 8 EEPROM 5V, 250 ns, CDIP32
WME128K8-300DEMEA 128K X 8 EEPROM 5V, 300 ns, CDSO32
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WMS128K8L-100CIE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
WMS128K8L-100CME 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
WMS128K8L-100DEIE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
WMS128K8L-100DEME 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM
WMS128K8L-100DRIE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM