參數(shù)資料
型號(hào)： WMS128K8L45DRI
元件分類： SRAM
英文描述： 128K X 8 STANDARD SRAM, 45 ns, CDSO32
封裝： CERAMIC, SOJ-32
文件頁(yè)數(shù)： 3/10頁(yè)
文件大小： 133K
代理商： WMS128K8L45DRI
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WMS128K8-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Sym
Conditions
-35
-45
-55
Units
Min
Max
Min
Max
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
150
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
15
mA
Output Low Voltage
VOL
IOL = 2.1mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -1.0mA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Condition
Package
Speed (ns)
Max
Unit
Input capacitance
CIN
VIN = 0V, f = 1.0MHz
32 Pin CSOJ, DIP,
15 to 55
20
pF
Flat Pack Evolutionary
36 Pin CSOJ, Flat Pack and
15 to 25
12
pF
32 Pin CSOJ Revolutionary
35 to 55
20
pF
Output capicitance
COUT
VOUT = 0V, f = 1.0MHz
32 Pin CSOJ, DIP,
15 to 55
20
pF
Flat Pack Evolutionary
36 Pin CSOJ, Flat Pack and
15 to 25
12
pF
32 Pin CSOJ Revolutionary
35 to 55
20
pF
32 Pin CLCC
15 to 55
15
pF
This parameter is guaranteed by design but not tested.
Parameter
Sym
Conditions
-15
-17
-20
-25
Units
Min
Max
Min
Max
Min
Max
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
150
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
20
15
mA
Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, VCC = 4.5
2.4
V
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