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參數(shù)資料
| 型號： | WMS512K8-85 |
| 英文描述： | 512Kx8 Monolithic SRAM(512Kx8單片靜態(tài)RAM（存取時間85ns）) |
| 中文描述： | 512Kx8單片的SRAM（512Kx8單片靜態(tài)隨機存儲器（存取時間85ns）） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 70K |
| 代理商： | WMS512K8-85 |
White Microelectronics Phoenix, AZ (602) 437-1520
2
S
1
WMS512K8-XXX
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
FEATURES
I
Access Times 70, 85, 100, 120ns
I
MIL-STD-883 Compliant Devices Available
I
Evolutionary, Corner Power/Ground Pinout
JEDEC Approved
32 pin Ceramc DIP (Package 300)
32 lead Ceramc SOJ (Package 101)
I
Commercial, Industrial and Military Temperature Ranges
I
5 Volt Power Supply
I
Low Power CMOS
I
Low Power Data Retention
I
TTL Compatible Inputs and Outputs
EVOLUTIONARY PINOUT
32 DIP
32 CSOJ (DE)
TOP VIEW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
A
0-18
I/O
0-7
CS
OE
WE
V
CC
GND
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
PIN DESCRIPTION
July 1997
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| WMS512K8BV-17E | 512Kx8 Monolithic SRAM(512Kx8單片靜態(tài)RAM（BiCMOS,存取時間17ns）) |
| WMS512K8BV-20E | 512Kx8 Monolithic SRAM(512Kx8單片靜態(tài)RAM（BiCMOS,存取時間20ns）) |
| WMS512K8LV-85DEIEA | 512Kx8 MONOLITHIC SRAM |
| WMS512K8LV-85DEME | 512Kx8 MONOLITHIC SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WMS512K8-85CC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 85NS, 32 DIP, COMMERCIAL SCREE - Bulk |
| WMS512K8-85CI | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 85NS, 32 DIP, INDUSTRIAL SCREE - Bulk |
| WMS512K8-85CM | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 85NS, 32 DIP, MIL-SCREENED - Bulk |
| WMS512K8-85CQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| WMS512K8-85DEC | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 85NS, 32 CSOJ EVOL., COMMERCIA - Bulk |
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