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參數(shù)資料
| 型號： | WMS512K8-L20CI |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 20 ns, CDIP32 |
| 封裝： | 0.600 INCH, BRAZED, CREAMIC, DIP-32 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 273K |
| 代理商： | WMS512K8-L20CI |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WMS512K8-XXX
October 2004
Rev. 10
White Electronic Designs Corp. reserves the right to change products or specications without notice.
AC Characteristics
(VCC = 5.0V, GND = 0V, -55°C ≤ TA < 125°C)
Parameter
Symbol
-15
-17
-20
-25
-35
-45
-55
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
Read Cycle Time
tRC
15
17
20
25
35
45
55
ns
Address Access Time
tAA
15
17
20
25
35
45
55
ns
Output Hold from Address Change
tOH
00
0
ns
Chip Select Access Time
tACS
15
17
20
25
35
45
55
ns
Output Enable to Output Valid
tOE
8
9
10
12
25
ns
Chip Select to Output in Low Z
tCLZ1
22
2
4
ns
Output Enable to Output in Low Z
tOLZ1
00
0
ns
Chip Disable to Output in High Z
tCHZ1
8
9
10
12
15
20
ns
Output Disable to Output in High Z
tOHZ1
8
9
10
12
15
20
ns
AC Characteristics
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)
Parameter
Symbol
-15
-17
-20
-25
-35
-45
-55
Unit
Min
Max
Min
Max
Min
Max
Min
Max Min Max Min Max Min Max
Write Cycle Time
tWC
15
17
20
25
35
45
55
ns
Chip Select to End of Write
tCW
13
14
15
25
35
50
ns
Address Valid to End of Write
tAW
13
14
15
25
35
50
ns
Data Valid to End of Write
tDW
8
9
10
20
25
ns
Write Pulse Width
tWP
13
14
15
25
35
40
ns
Address Setup Time
tAS
22
2
ns
Address Hold Time
tAH
00
0
5
ns
Output Active from End of Write
tOW1
22
3
4
5
ns
Write Enable to Output in High Z
tWHZ1
89
9
10
15
20
25
ns
Data Hold Time
tDH
00
0
ns
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS
Current Source
IOL
IOH
Ceff = 50 pF
D.U.T.
VZ
≈ 1.5V
(Bipolar Supply)
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
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| WS512K8L-20CMA | 512K X 8 MULTI DEVICE SRAM MODULE, 20 ns, CDIP32 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WMS512K8L-20CI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8L-20CIA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8L-20CLC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8L-20CLCA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx8 MONOLITHIC SRAM |
| WMS512K8L-20CLI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx8 MONOLITHIC SRAM |
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