- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄231495 > WMS512K8V-20FM (MICROSEMI CORP-PMG MICROELECTRONICS) 512K X 8 STANDARD SRAM, 20 ns, CDFP36 PDF資料下載
參數(shù)資料
| 型號(hào)： | WMS512K8V-20FM |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 20 ns, CDFP36 |
| 封裝： | CERAMIC, DFP-36 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 323K |
| 代理商： | WMS512K8V-20FM |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WMS512K8V-XXX
October 2004
Rev. 8
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA < 125°C
Parameter Read Cycle
Symbol
-15
-17
-20
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
15
17
20
ns
Address Access Time
tAA
15
17
20
ns
Output Hold from Address Change
tOH
000
ns
Chip Select Access Time
tACS
15
17
20
ns
Output Enable to Output Valid
tOE
8
10
ns
Chip Select to Output in Low Z
tCLZ1
111
ns
Output Enable to Output in Low Z
tOLZ1
000
ns
Chip Disable to Output in High Z
tCHZ1
8
10
ns
Output Disable to Output in High Z
tOHZ1
8
10
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C
Parameter Write Cycle
Symbol
-15
-17
-20
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
15
17
20
ns
Chip Select to End of Write
tCW
12
14
ns
Address Valid to End of Write
tAW
12
14
ns
Data Valid to End of Write
tDW
9
10
ns
Write Pulse Width
tWP
12
14
ns
Address Setup Time
tAS
000
ns
Address Hold Time
tAH
000
ns
Output Active from End of Write
tOW1
233
ns
Write Enable to Output in High Z
tWHZ1
889
ns
Data Hold Time
tDH
000
ns
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS
Current Source
IOL
IOH
Ceff = 50 pF
D.U.T.
VZ
≈ 1.5V
(Bipolar Supply)
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 2.5
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WS512K32L-25G1TQ | 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68 |
| WF1M32E-100H2M | 4M X 8 FLASH 12V PROM MODULE, 100 ns, CPGA66 |
| WEDPND8M72S-266BC | 8M X 72 DDR DRAM MODULE, 0.75 ns, PBGA219 |
| WF2M32-120G2UE5A | 2M X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68 |
| WV3HG32M72EER534AD6MG | 32M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WMS512K8-XCX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM |
| WMS512K8-XDEX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM |
| WMS512K8-XXX | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx8 MONOLITHIC SRAM, SMD 5962-95613 |
| WMS7100010P | 功能描述:IC POT DGTL 10K 256 TAPS 8-DIP RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:XDCP™ 接片:256 電阻（歐姆）:100k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 ±300 ppm/°C 存儲(chǔ)器類型:非易失 接口:I²C（設(shè)備位址） 電源電壓:2.7 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:14-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:14-TSSOP 包裝:帶卷 (TR) |
| WMS7100050P | 功能描述:IC POT DGTL 50K 256 TAPS 8-DIP RoHS:否 類別:集成電路 (IC) >> 數(shù)據(jù)采集 - 數(shù)字電位器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:XDCP™ 接片:256 電阻（歐姆）:100k 電路數(shù):1 溫度系數(shù):標(biāo)準(zhǔn)值 ±300 ppm/°C 存儲(chǔ)器類型:非易失 接口:I²C（設(shè)備位址） 電源電壓:2.7 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:14-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:14-TSSOP 包裝:帶卷 (TR) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。