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參數(shù)資料
| 型號(hào)： | WPSCDS-180EB |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | 260 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 1064K |
| 代理商： | WPSCDS-180EB |
Thyristors - Maximum Surge Ratings
(TJ = 25 °C UNLESS OTHERWISE NOTED)
Rating
.
Non-Repetitive Peak Pulse Current
.
Non-Repetitive
Peak
On-State
Surge Current
Symbol
I
PPS
I
TSM
Short-Circuit
Current Wave
2/10 s
.
8/20 s
.
10/160 s
.
5/310 s
.
10/560 s
.
10/1000 s
Open-Circuit
Voltage Wave
2/10 s 1.2/50 s 10/160 s 10/700 s 10/560 s 10/1000 s
C
175 A
150 A
100 A
85 A
70 A
50 A
20 A
D
300 A
225 A
150 A
115 A
100 A
80 A
30 A
E
500 A
350 A
200 A
150 A
125 A
100 A
60 A
Notes
(1,2,4,5,6)
(1,2,3,4)
Notes:
1. Thermal accumulation between successive surge tests is not allowed.
2. The device under test initially must be in thermal equilibrium with TJ =
25 °C.
3. Test at 1 cycle, 60 Hz.
4. Surge ratings are non-repetitive because instantaneous junction
temperatures may exceed the maximum rated TJ. Nevertheless, devices
will survive many surge applications without degradation. Surge capability
will not degrade over a device's typical operating life.
5. Adjust the surge generator for optimum current-wave accuracy when
both voltage and current wave specifications cannot be exactly met. The
current wave is more important than the voltage wave for accurate surge
evaluation.
6. The waveform is defined as A/B ms where:
A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta)
B: (Duration time to 50% level of I
PPS) = T
1
- T0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WPSCDS-180ET | 260 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA |
| WPSCDS-180CFB | 260 V, 20 A, SILICON SURGE PROTECTOR, DO-214AA |
| WPSCDS-180CFT | 260 V, 20 A, SILICON SURGE PROTECTOR, DO-214AA |
| WPSCDS-180DFB | 260 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA |
| WPSCDS-180DFT | 260 V, 30 A, SILICON SURGE PROTECTOR, DO-214AA |
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