參數(shù)資料
型號(hào): WPSCDS-180EFB
元件分類: 浪涌電流限制器
英文描述: 260 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
封裝: PLASTIC, SMB, 2 PIN
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 1064K
代理商: WPSCDS-180EFB
Thyristors - Definitions
SYMBOL
.
CHARACTERISTIC
.
VALUE
V
BO
Max Breakover Voltage
The maximum voltage across the device in or at breakdown measured under
a specified voltage and current rate of rise.
V
BR
Min Breakover Voltage
The minimum voltage at which the device switch-on begins and significant
current flows.
I
BO
Breakover Current
I
H
Holding Current
The minimum current required to maintain the device in the on-state.
I
T
On-state Current
V
T
On-state Voltage
The voltage across the device in the on-state condition at a specified current.
(I
T)
V
DRM
Rated Repetitive Peak
Off-state Voltage
Rated maximum (peak) continuous voltage that may be applied in the
off-state condition.
I
DRM
Repetitive Peak
Off-state Current
The maximum (peak) value of the current that results from the application
of
(V
DRM)
I
PPS
Non-Repetitive
Peak Pulse Current
Rated maximum value of peak impulse current of specified amplitude and
waveshape that may be applied without damage to the device under test.
I
TSM
Non-Repetitive Surge
Peak On-state Current
Rated maximum value of AC current, at a given frequency, which may be
applied for specified time or number of cycles.
di/dt
Critical Rate of Rise of
On-state Current.
Rated value of the rate of rise of current that the device can withstand
without damage.
dv/dt
Critical Rate of Rise of
Off-state Voltage.
The maximum rate of rise of voltage (below V
DRM) that will not cause
switching from the off-state to the on-state
The instantaneous current flowing at the breakover voltage.
(V
BO)
The current through the device in the on-state condition.
相關(guān)PDF資料
PDF描述
WPSCDS-180EFT 260 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA
WPSSAB0603-101-03 SILICON SURGE PROTECTOR
WPSSAB0603-201-03 SILICON SURGE PROTECTOR
WPSSAB0603-301-03 SILICON SURGE PROTECTOR
WPSSAB0805-101-03 SILICON SURGE PROTECTOR
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