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參數(shù)資料
| 型號： | WS128K32-120 |
| 英文描述： | 128Kx35 SRAM Module(128Kx32靜態(tài)RAM模塊（存取時(shí)間120ns）) |
| 中文描述： | 128Kx35 SRAM的模塊（128Kx32靜態(tài)內(nèi)存模塊（存取時(shí)間120ns）） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 205K |
| 代理商： | WS128K32-120 |
White Microelectronics Phoenix, AZ (602) 437-1520
4
S
3
WS128K32-XXX
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
WE
1-4
capacitance
HIP (PGA)
CQFP G4
CQFP G2
CQFP G2U
CS
1-4
capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
50
Unit
pF
pF
20
50
20
15
20
20
50
C
CS
C
I/O
C
AD
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
pF
pF
pF
Parameter
Sym
Conditions
-70
-85
-100
-120
Units
Min
Max
10
10
120
5
0.4
Min
Max
10
10
120
5
0.4
Min
Max
10
10
120
2.4
0.4
Min
Max
10
10
120
2.4
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
CC
= 5.5, V
IN
= G
ND
to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 2.1mA, Vcc = 4.5
I
OH
= -1.0mA, Vcc = 4.5
μ
A
μ
A
mA
mA
V
V
2.4
2.4
2.4
2.4
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°
C
°
C
V
°
C
V
-0.5
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
4.5
2.2
-0.5
Max
5.5
Unit
V
V
V
V
CC
+ 0.3
+0.8
DC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
DATA RETENTION CHARACTERISTICS
(T
A
= -55
°
C to +125
°
C)
CS
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
Mode
Standby
Read
Out Disable
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
Parameter
Symbol
Conditions
-70
Typ
-85
Typ
-100
Typ
-120
Typ
Units
Min
Max
Min
Max
Min
Max
Min
Max
Data Retention
Supply Voltage
V
DR
CS
≥
V
CC
-0.2V
2.0
5.5
2.0
5.5
2.0
5.5
2.0
5.5
V
Data Retention
Current
I
CCDR1
V
CC
= 3V
80
1600
80
1600
80
1100
80
1100
μ
A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| WS128K32-120G2C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS128K32-120G2CA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS128K32-120G2I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS128K32-120G2IA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS128K32-120G2M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
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