![](http://datasheet.mmic.net.cn/100000/WS128K32-120G1UIA_datasheet_3247747/WS128K32-120G1UIA_3.png)
4
SRAM
MODULES
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS128K32-XXX
Parameter
Symbol
Conditions
-70
-85
-100
-120
Units
Min
Max
Min
Max
Min
Max
Min
Max
Data Retention
Supply Voltage
VDR
CSVCC -0.2V
2.0
5.5
2.0
5.5
2.0
5.5
2.0
5.5
V
Data Retention
Current
ICCDR1
VCC = 3V
4
mA
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
Max Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G4T
CQFP G1U
20
CQFP G2U
15
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
Parameter
Sym
Conditions
-70
-85
-100
-120
Units
Min
Max
Min
Max
Min
Max
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current I C C CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
120
mA
Standby Current
ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
2020
20
mA
Output Low Voltage
VOL IOL = 2.1mA, Vcc = 4.5
0.4
V
Output High Voltage
VOH IOH = -1.0mA, Vcc = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
ABSOLUTE MAXIMUM RATINGS
TRUTHTABLE
RECOMMENDEDOPERATINGCONDITIONS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
DCCHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
DATARETENTIONCHARACTERISTICS
(TA = -55°C to +125°C)
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active