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參數(shù)資料
| 型號(hào)： | WS1M8-25 |
| 英文描述： | 2x512Kx8 Dualithic SRAM(2x512Kx8 Dualithic 靜態(tài)RAM（存取時(shí)間25ns）) |
| 中文描述： | 2x512Kx8 Dualithic的SRAM（2x512Kx8 Dualithic靜態(tài)隨機(jī)存儲(chǔ)器（存取時(shí)間25ns的）） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | WS1M8-25 |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS1M8-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°
C
°
C
V
°
C
V
-0.5
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
NOTE: OE is internally tied to the GND and not accessible on the WS1M8-XCX.
RECOMMENDED OPERATING CONDITIONS
Parameter
Input capacitance
Output capicitance
This parameter is guaranteed by design but not tested.
Symbol
C
IN
C
OUT
Condition
V
IN
= 0V, f = 1.0MHz
V
OUT
= 0V, f = 1.0MHz
Max
20
20
Unit
pF
pF
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
4.5
2.2
-0.3
-55
Max
5.5
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
(T
A
= +25
°
C)
DC CHARACTERISTICS
(V
CC
= 5.0V, V
SS
= 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Sym
Conditions
Units
Min
Max
10
10
180
40
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
I
LI
I
LO
1
I
CC
1
I
SB
1
V
OL
V
OH
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA
I
OH
= -4.0mA
μ
A
μ
A
mA
mA
V
V
2.4
Parameter
Symbol
Conditions
Units
Min
2.0
Typ
Max
5.5
18.0*
Data Retention Supply Voltage
Data Retention Current
V
DR
I
CCDR1
CS
≥
V
CC
-0.2V
V
CC
= 3V
V
3.0
mA
LOW POWER DATA RETENTION CHARACTERISTICS (WS1M8L-XXX ONLY)
(T
A
= -55
°
C to +125
°
C)
NOTE: DC test conditions: V
IH
= V
CC
-0.3V , V
IL
= 0.3V
1. OE is internally tied to the GND and not accessible on the WS1M8-XCX.
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| WS1M8-35 | 2x512Kx8 Dualithic SRAM(2x512Kx8 Dualithic 靜態(tài)RAM（存取時(shí)間35ns）) |
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| WS1M8-17CC | x8 SRAM Module |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WS1M8-25CC | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8 SRAM Module |
| WS1M8-25CCA | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2x512Kx8 DUALITHICTM SRAM |
| WS1M8-25CI | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8 SRAM Module |
| WS1M8-25CIA | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:2x512Kx8 DUALITHICTM SRAM |
| WS1M8-25CM | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:x8 SRAM Module |
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