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參數(shù)資料
| 型號： | WS1M8-45DJM |
| 元件分類： | SRAM |
| 英文描述： | 1M X 8 STANDARD SRAM, 45 ns, CDSO36 |
| 封裝： | CERAMIC, SOJ-36 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 162K |
| 代理商： | WS1M8-45DJM |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS1M8-XXX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
NOTE: OE is internally tied to the GND and not accessible on the WS1M8-XCX.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
Max Unit
Input capacitance
CIN
VIN = 0V, f = 1.0MHz
20
pF
Output capicitance
COUT
VOUT = 0V, f = 1.0MHz
20
pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
CAPACITANCE
(TA = +25
°C)
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO1
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC1
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
180
mA
Standby Current
ISB1
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
40
mA
Output Low Voltage
VOL
IOL = 8mA
0.4
V
Output High Voltage
VOH
IOH = -4.0mA
2.4
V
Parameter
Symbol
Conditions
Units
Min
Typ
Max
Data Retention Supply Voltage
VDR
CS
≥ VCC -0.2V
2.0
5.5
V
Data Retention Current
ICCDR1
VCC = 3V
3.0
18.0*
mA
LOW POWER DATA RETENTION CHARACTERISTICS (WS1M8L-XXX ONLY)
(TA = -55
°C to +125°C)
NOTE: DC test conditions: VIH = VCC -0.3V , VIL = 0.3V
1. OE is internally tied to the GND and not accessible on the WS1M8-XCX.
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