參數(shù)資料
型號: WS1M8V-25CX
英文描述: 2x512Kx8 Dualithic SRAM(3.3V,2x512Kx8 Dualithic 靜態(tài)RAM(存取時(shí)間25ns))
中文描述: 2x512Kx8 Dualithic SRAM的電壓(3.3V,2x512Kx8 Dualithic靜態(tài)隨機(jī)存儲器(存取時(shí)間25ns的))
文件頁數(shù): 2/5頁
文件大小: 133K
代理商: WS1M8V-25CX
2
White Microelectronics Phoenix, AZ (602) 437-1520
3
S
WS1M8V-XCX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
+4.6
150
5.5
Unit
°
C
°
C
V
°
C
V
-0.5
CS
H
L
L
WE
X
H
L
Mode
Standby
Read
Write
Data I/O
High Z
Data Out
Data In
Power
Standby
Active
Active
NOTE: OE is internally tied to GND.
RECOMMENDED OPERATING CONDITIONS
Parameter
Input capacitance
Output capicitance
This parameter is guaranteed by design but not tested.
Symbol
C
IN
C
OUT
Condition
V
IN
= 0V, f = 1.0MHz
V
OUT
= 0V, f = 1.0MHz
Max
28
28
Unit
pF
pF
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
V
CC
V
IH
V
IL
T
A
Min
3.0
2.2
-0.3
-55
Max
3.6
Unit
V
V
V
°
C
V
CC
+ 0.3
+0.8
+125
CAPACITANCE
(T
A
= +25
°
C)
DC CHARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Sym
Conditions
Units
Min
Max
10
10
160
30
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V , V
IL
= 0.3V
1. OE is internally tied to GND.
I
LI
I
LO
1
I
CC
1
I
SB
1
V
OL
V
OH
V
CC
= 3.6, V
IN
= GND to V
CC
CS = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, f = 5MHz, Vcc = 3.6
CS = V
IH
, f = 5MHz, Vcc = 3.6
I
OL
= 8.0mA
I
OH
= -4.0mA
μ
A
μ
A
mA
mA
V
V
2.4
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