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參數(shù)資料
| 型號： | WS1M8V-55CX |
| 英文描述： | 2x512Kx8 Dualithic SRAM(3.3V,2x512Kx8 Dualithic 靜態(tài)RAM（存取時間55ns）) |
| 中文描述： | 2x512Kx8 Dualithic SRAM的電壓（3.3V，2x512Kx8 Dualithic靜態(tài)隨機存儲器（存取時間55ns）） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 133K |
| 代理商： | WS1M8V-55CX |
3
White Microelectronics Phoenix, AZ (602) 437-1520
3
S
WS1M8V-XCX
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
AC CHARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-17
-20
-25
-35
-45
-55
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
17
20
25
35
45
55
ns
Address Access Time
t
AA
17
20
25
35
45
55
ns
Output Hold from Address Change
t
OH
0
0
0
0
0
0
ns
Chip Select Access Time
t
ACS
17
20
25
35
45
55
ns
Chip Select to Output in Low Z
t
CLZ
1
2
2
2
4
4
4
ns
Chip Disable to Output in High Z
t
CHZ
1
9
10
12
15
20
20
ns
1. This parameter is guaranteed by design but not tested.
2. OE is internally tied to GND.
AC CHARACTERISTICS
(V
CC
= 3.3V, GND = 0V, T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
-17
-20
-25
-35
-45
-55
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
17
20
25
35
45
55
ns
Chip Select to End of Write
t
CW
14
14
15
25
35
50
ns
Address Valid to End of Write
t
AW
14
14
15
25
35
50
ns
Data Valid to End of Write
t
DW
9
10
10
20
25
25
ns
Write Pulse Width
t
WP
14
14
15
25
35
40
ns
Address Setup Time
t
AS
0
0
0
0
0
0
ns
Address Hold Time
t
AH
0
0
0
0
5
5
ns
Output Active from End of Write
t
OW
1
2
3
4
4
5
5
ns
Write Enable to Output in High Z
t
WHZ
1
9
9
10
15
15
25
ns
Data Hold Time
t
DH
0
0
0
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| WS1M8V-XCX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2X512KX8 Dualithic SRAM Advanced |
| WS1M8-XCX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2X512X8 Dualithic SRAM Preliminary |
| WS1M8-XDJX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM MCP |
| WS1M8-XFX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM MCP |
| WS1M8-XXX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2 x 512K x 8 Dualithic SRAM |
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