- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄68596 > WS512K32-55G1TCA (WHITE ELECTRONIC DESIGNS CORP) 512K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68 PDF資料下載
參數(shù)資料
| 型號： | WS512K32-55G1TCA |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | SRAM |
| 英文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68 |
| 封裝： | 23.90 X 23.90 MM, 4.06 MM HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 485K |
| 代理商： | WS512K32-55G1TCA |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K32-XXX
White Electronic Designs
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp (Mil)
TA
-55
+125
°C
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
Max Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz 50 pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G4T
50
CQFP G2U/G1U/G1T/G2L
20
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz 20 pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz 20 pF
Address input capacitance CAD
VIN = 0 V, f = 1.0 MHz 50 pF
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10A
Operating Supply Current x 32 Mode ICC x 32
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
660
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
80
mA
Output Low Voltage
VOL
IOL = 8mA for 15 - 35ns,
0.4
V
IOL = 2.1mA for 45 - 55ns, Vcc = 4.5
Output High Voltage
VOH
IOH = -4.0mA for 15 - 35ns,
2.4
V
IOH = -1.0mA for 45 - 55ns, Vcc = 4.5
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
DATA RETENTION CHARACTERISTICS
(TA= -55°C TO +125°C)
Parameter
Symbol
Conditions
Units
Min
Max
Data Retention Supply Voltage
VDR
CS VCC - 0.2V
2.0
5.5
V
Data Retention Current
I CCDR1
VCC = 3V
28
mA
Low Power Data Retention
I CCDR2
VCC = 3V
16
mA
Current (WS512K32L-XXX)
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
This parameter is guaranteed by design but not tested.
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
相關PDF資料 |
PDF描述 |
|---|---|
| WS512K32-35G1TQA | 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| WS512K32L-17G1UMA | 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 |
| WS512K32L-35G1UQA | 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| WS512K32-35G1TMA | 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| WS512K32-45G1TQ | 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WS512K32-55G2I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS512K32-55G2M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS512K32-55G2Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
| WS512K32-55G2TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC |
| WS512K32-55G2TCA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復。