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參數(shù)資料
| 型號： | WS512K32V-15G1TMA |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | SRAM |
| 英文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 |
| 封裝： | 23.90 MM, CERAMIC, QFP-68 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 154K |
| 代理商： | WS512K32V-15G1TMA |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS512K32V-XXX
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
HIP(PGA)
20
CQFPG2U/G1U/G1T
20
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Addressinputcapacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
OperatingTemperature
TA
-55
+125
°C
StorageTemperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
4.6
V
JunctionTemperature
TJ
150
°C
Supply Voltage
VCC
-0.5
4.6
V
CS
OE
WE
Mode
DataI/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
DC CHARACTERISTICS
(VCC = 3.3V ± 0.3V, TA = -55°C TO +125°C)
Parameter
Sym
Conditions
Units
Min
Max
InputLeakageCurrent
ILI
VIN = GND to VCC
10
A
OutputLeakageCurrent
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current (x 32 Mode)
ICC x 32
CS = VIL, OE = VIH, f = 5MHz, VCC = 3.6V
400
mA
StandbyCurrent
ISB
CS = VIH, OE = VIH, f = 5MHz, VCC = 3.6V
200
mA
Output Low Voltage
VOL
IOL= 4.0mA
0.4
V
Output High Voltage
VOH
IOH=-4.0mA
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V.
NOTE: Contact factory for low power option.
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| WS512K32V-15G1UC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE |
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| WS512K32V-15G1UI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 SRAM 3.3V MODULE |
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