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參數(shù)資料
| 型號： | WS512K32V-70 |
| 英文描述： | 512Kx32 3.3V SRAM Module(512Kx32, 3.3V,靜態(tài)RAM模塊（存取時間70ns）) |
| 中文描述： | 512Kx32 3.3靜態(tài)存儲器模塊（512Kx32，3.3伏，靜態(tài)內(nèi)存模塊（存取時間70ns）） |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 212K |
| 代理商： | WS512K32V-70 |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K32V-XXX
FIG. 3
AC TEST CIRCUIT
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
I
Current Source
D.U.T.
C = 50 pf
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
AC CHARACTERISTICS
(V
CC
= 3.3V, V
SS
=0V, T
A
= -55
°
C to +125
°
C)
AC TEST CONDITIONS
Parameter
Symbol
-70
-85
-100
-120
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
70
85
100
120
ns
Address Access Time
t
AA
70
85
100
120
ns
Output Hold from Address Change
t
OH
5
5
5
5
ns
Chip Select Access Time
t
ACS
70
85
100
120
ns
Output Enable to Output Valid
t
OE
35
40
50
60
ns
Chip Select to Output in Low Z
t
CLZ
1
10
10
10
10
ns
Output Enable to Output in Low Z
t
OLZ
1
5
5
5
5
ns
Chip Disable to Output in High Z
t
CHZ
1
25
25
35
35
ns
Output Disable to Output in High Z
t
OHZ
1
25
25
35
35
ns
1. This parameter is guaranteed by design but not tested.
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
Parameter
Symbol
-70
-85
-100
-120
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
70
85
100
120
ns
Chip Select to End of Write
t
CW
60
75
80
100
ns
Address Valid to End of Write
t
AW
60
75
80
100
ns
Data Valid to End of Write
t
DW
30
30
40
40
ns
Write Pulse Width
t
WP
50
50
60
60
ns
Address Setup Time
t
AS
0
0
0
0
ns
Address Hold Time
t
AH
5
5
5
5
ns
Output Active from End of Write
t
OW
1
5
5
5
5
ns
Write Enable to Output in High Z
t
WHZ
1
25
25
35
35
ns
Data Hold from Write Time
t
DH
0
0
0
0
ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(V
CC
= 3.3V, V
SS
=0V, T
A
= -55
°
C to +125
°
C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WS512K32V-85 | 512Kx32 3.3V SRAM Module(512Kx32, 3.3V,靜態(tài)RAM模塊（存取時間85ns）) |
| WS512K32V-120 | 512Kx32 3.3V SRAM Module(512Kx32, 3.3V,靜態(tài)RAM模塊（存取時間120ns）) |
| WS512K32V-15 | 512Kx32 3.3V SRAM Module(512Kx32, 3.3V,靜態(tài)RAM模塊（存取時間15ns）) |
| WS512K32V-17 | 512Kx32 3.3V SRAM Module(512Kx32, 3.3V,靜態(tài)RAM模塊（存取時間17ns）) |
| WS512K32V-20 | 512Kx32 3.3V SRAM Module(512Kx32, 3.3V,靜態(tài)RAM模塊（存取時間20ns）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WS512K32V-XG1TX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM MCP |
| WS512K32V-XG1UX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM MCP |
| WS512K32V-XG2TX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM MCP |
| WS512K32V-XG2UX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM MCP |
| WS512K32V-XXX | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx32 SRAM 3.3V MULTICHIP PACKAGE |
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