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參數(shù)資料
| 型號(hào)： | WS512K32V-XXX |
| 英文描述： | 512Kx32 SRAM 3.3V MULTICHIP PACKAGE |
| 中文描述： | 512Kx32 SRAM的3.3多芯片封裝 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 302K |
| 代理商： | WS512K32V-XXX |
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WS512K32V-XXX
March 2006
Rev. 12
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V.
Contact factory for low power option.
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
4.6
150
4.6
Unit
°C
°C
V
°C
V
-0.5
TRUTH TABLE
Mode
Standby
Read
Write
Out Disable
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min
3.0
2.2
-0.3
Max
3.6
Unit
V
V
V
V
CC
+ 0.3
+0.8
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
CAPACITANCE
T
A
= +25°C
Symbol
C
OE
C
WE
Parameter
OE# capacitance
WE
1-4
# capacitance
HIP (PGA)
CQFP G2U
CS
1-4
# capacitance
Data# I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Conditions
V
IN
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
Max Unit
50
pF
pF
20
20
20
20
50
C
CS
C
I/O
C
AD
V
IN
= 0V, f = 1.0 MHz
V
I/O
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
pF
pF
pF
DC CHARACTERISTICS
V
CC
= 3.3V ± 0.3V, V
SS
= 0V, -55°C
≤
T
A
≤
+125°C
Parameter
Sym
Conditions
Units
Min
Max
10
10
400
200
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
I
LI
I
LO
V
IN
= GND to V
CC
CS# = V
IH
, OE# = V
IH
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6
CS# = V
IH
, OE# = V
IH
, f = 5MHz, V
CC
= 3.6
I
OL
= 4.0mA
I
OH
= -4.0mA
μA
μA
mA
mA
V
V
I
CC
x 32
I
SB
V
OL
V
OH
2.4
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