參數(shù)資料
型號(hào)： WS512K48-17G4WX
英文描述： 512Kx48 SRAM Module(512Kx48靜態(tài)RAM模塊（存取時(shí)間17ns）)
中文描述： 512Kx48 SRAM的模塊（512Kx48靜態(tài)內(nèi)存模塊（存取時(shí)間17ns））
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 80K
代理商： WS512K48-17G4WX
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K48-XG4WX
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
T
A
T
STG
V
G
T
J
V
CC
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°
C
°
C
V
°
C
V
-0.5
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
Symbol
V
CC
V
IH
V
IL
T
A
T
A
Min
4.5
2.2
-0.3
-55
-40
Max
5.5
Unit
V
V
V
°
C
°
C
V
CC
+ 0.3
+0.8
+125
+85
DC CHARACTERISTICS
(V
CC
= 5.0V, T
A
= -55
°
C to +125
°
C)
Parameter
Sym
Conditions
Units
Min
Max
10
10
990
90
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
IH
= V
CC
-0.3V, V
IL
= 0.3V
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
V
CC
= 5.5, V
IN
= GND to V
CC
CS = V
IH
, OE = V
IH
, V
OUT
= GND to V
CC
CS = V
IL
, OE = V
IH
, f = 5MHz, Vcc = 5.5
CS = V
IH
, OE = V
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 8mA, V
CC
= 4.5
I
OH
= -4.0mA, V
CC
= 4.5
μ
A
μ
A
mA
mA
V
V
2.4
CAPACITANCE
(T
A
= +25
°
C)
Parameter
OE capacitance
WE capacitance
CS capacitance
Data I/O capacitance
Address input capacitance
This parameter is guaranteed by design but not tested.
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
100
20
20
20
100
Unit
pF
pF
pF
pF
pF
DATA RETENTION CHARACTERISTICS
(T
A
= -55
°
C to +125
°
C)
Parameter
Symbol
Conditions
Units
Min
2.0
Max
5.5
42
24
Data Retention Supply Voltage
Data Retention Current
Low Power Data Retention
Current (WS512K48L-XXX)
* Also available in Low Power version, please call factory for information.
V
DR
I
CCDR1
I
CCDR2
CS
≥
V
CC
-0.2V
V
CC
= 3V
V
CC
= 3V
V
mA
mA
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