參數(shù)資料
型號(hào)： WS512K8-35CQ
元件分類： SRAM
英文描述： 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, DMA32
封裝： 0.600 INCH, CERAMIC, DIP-32
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 157K
代理商： WS512K8-35CQ
2
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WS512K8-XCX
FIG. 2
AC TEST CIRCUIT
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
TRUTH TABLE
Parameter
Symbol
Condition
Max
Unit
Input capacitance
CIN
VIN = 0V, f = 1.0MHz
45
pF
Output capicitance
COUT
VOUT = 0V, f = 1.0MHz
45
pF
This parameter is guaranteed by design but not tested.
CAPACITANCE
(TA = +25
°C)
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
Conditions
-20
-25
-35
-45
Units
Min
Max
Min
Max
Min
Max Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
210
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz
80
60
55
mA
Output Low Voltage
VOL
IOL = 8mA, Vcc = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA, Vcc = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS
(TA = -55
°C to +125°C)
Parameter
Symbol
Conditions
-20
-25
-35
-45
Units
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max Min
Typ
Max
Data Retention Supply Voltage
VDR
CS
≥ VCC -0.2V 2.0
5.5
2.0
5.5
2.0
5.5
2.0
5.5
V
Data Retention Current
ICCDR1
VCC = 3V
8.0
12.8
8.0
12.8
8.0 12.8
mA
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