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參數(shù)資料
| 型號： | WS57C191C-45D |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 2K X 8 UVPROM, 45 ns, CDIP24 |
| 封裝： | 0.600 INCH, CERDIP-24 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 54K |
| 代理商： | WS57C191C-45D |
WS57C191C/291C
2-10
SYMBOL
PARAMETER
CONDITIONS
TYP(5)
MAX
UNITS
CIN
Input Capacitance
VIN = 0V
4
6
pF
COUT
Output Capacitance
VOUT = 0V
8
12
pF
CVPP
VPP Capacitance
VPP = 0 V
18
25
pF
CAPACITANCE(4) T
A = 25 °C, f = 1 MHz
30 pF
(INCLUDING SCOPE
AND JIG
CAPACITANCE)
98
2.01 V
D.U.T.
A.C. TESTING INPUT/OUTPUT WAVEFORM
TEST LOAD (High Impedance Test Systems)
3.0
0.0
1.5
TEST
POINTS
NOTE: 6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters.
A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended.
Inadequate decoupling may result in access time degradation or other transient performance failures.
NOTES: 4. This parameter is only sampled and is not 100% tested.
5.Typical values are for TA = 25°C and nominal supply voltages.
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a
logic "0." Timing measurements are made at 1.5 V for input and
output transitions in both directions.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WS57C191C-45DI | 制造商:WSI 功能描述: |
| WS57C191C-45DMB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED 2K x 8 CMOS PROM/RPROM |
| WS57C191C-45J | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED 2K x 8 CMOS PROM/RPROM |
| WS57C191C-45P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED 2K x 8 CMOS PROM/RPROM |
| WS57C191C-45Y | 制造商:WSI 功能描述: |
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