參數(shù)資料
型號: WSE128K16-35G2TIA
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, CQFP68
封裝: 22.40 MM, CERAMIC, QFP-68
文件頁數(shù): 10/15頁
文件大?。?/td> 299K
代理商: WSE128K16-35G2TIA
4
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WSE128K16-XXX
FIG. 3
AC TEST CIRCUIT
AC TEST CONDITIONS
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
SRAM AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
-35
-45
-70
Units
Read Cycle
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
35
45
70
ns
Address Access Time
tAA
35
45
70
ns
Output Hold from Address Change
tOH
00
5
ns
Chip Select Access Time
tACS
35
45
70
ns
Output Enable to Output Valid
tOE
20
25
35
ns
Chip Select to Output in Low Z
tCLZ1
33
5
ns
Output Enable to Output in Low Z
tOLZ1
00
5
ns
Chip Disable to Output in High Z
tCHZ1
20
25
ns
Output Disable to Output in High Z
tOHZ1
20
25
ns
1. This parameter is guaranteed by design but not tested.
SRAM AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
-35
-45
-70
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
35
45
70
ns
Chip Select to End of Write
tCW
25
30
60
ns
Address Valid to End of Write
tAW
25
30
60
ns
Data Valid to End of Write
tDW
20
25
30
ns
Write Pulse Width
tWP
25
30
50
ns
Address Setup Time
tAS
00
5
ns
Address Hold Time
tAH
00
5
ns
Output Active from End of Write
tOW1
44
5
ns
Write Enable to Output in High Z
tWHZ1
20
25
ns
Data Hold Time
tDH
00
0
ns
1. This parameter is guaranteed by design but not tested.
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