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參數(shù)資料
| 型號： | WSF128K16-72HIA |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CHIP66 |
| 封裝： | 1.185 INCH SQUARE, HERMETIC SEALED, CERAMIC, HIP-66 |
| 文件頁數(shù)： | 9/15頁 |
| 文件大小： | 178K |
| 代理商： | WSF128K16-72HIA |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WSF128K16-XXX
ABSOLUTE MAXIMUM RATINGS
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
Conditions
Min
Max
Unit
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
SCS = VIH, OE = VIH, VOUT = GND to VCC
10
A
SRAM Operating Supply Current x 16 Mode
ICCx16
SCS = VIL, OE = FCS = VIH, f = 5MHz, VCC = 5.5
360
mA
Standby Current
ISB
FCS = SCS = VIH, OE = VIH, f = 5MHz, VCC = 5.5
40
mA
SRAM Output Low Voltage
VOL
IOL = 2.1mA, VCC = 4.5
0.4
V
SRAM Output High Voltage
VOH
IOH = -1.0mA, VCC = 4.5
2.4
V
Flash VCC Active Current for Read (1)
ICC1
FCS = VIL, OE = SCS = VIH
100
mA
Flash VCC Active Current for Program or
ICC2
FCS = VIL, OE = SCS = VIH
130
mA
Erase (2)
Flash Output Low Voltage
VOL
IOL = 8.0mA, VCC = 4.5
0.45
V
Flash Output High Voltage
VOH1
IOH = -2.5 mA, VCC = 4.5
0.85 x VCC
V
Flash Output High Voltage
VOH2
IOH = -100
A, VCC = 4.5
VCC -0.4
V
Flash Low VCC Lock Out Voltage
VLKO
3.2
V
Parameter
Flash Data Retention
10 years
Flash Endurance (write/erase cycles)
10,000
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
7.0
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
SRAM TRUTH TABLE
SCS
OE
SWE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Read
High Z
Active
L
X
L
Write
Data In
Active
CAPACITANCE
(TA = +25
°C)
Test
Symbol
Condition
Max
Unit
OE Capacitance
COE
VIN = 0V, f = 1.0MHz
50
pF
F/S WE 1-2 Capacitance
CWE
VIN = 0V, f = 1.0MHz
20
pF
F/S CS 1-2 Capacitance
CCS
VIN = 0V, f = 1.0MHz
20
pF
SD0-15/FD0-15 Capacitance
CI/O
VIN = 0V, f = 1.0MHz
20
pF
A0 - A16 Capacitance
CAD
VIN = 0V, f = 1.0MHz
50
pF
This parameter is guaranteed by design but not tested.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WSF128K16-72HM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K X 16 SRAM /FLASH MODULE SMD 5962-96900 |
| WSF128K16-72HMA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:128K X 16 SRAM /FLASH MODULE SMD 5962-96900 |
| WSF128K16-XG1TX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM/Flash MCP |
| WSF128K16-XG1UX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM/Flash MCP |
| WSF128K16-XH1X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM/Flash MCP |
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