參數(shù)資料
型號(hào): WSF2816-39H1M
元件分類(lèi): 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, CHIP66
封裝: CERAMIC, HIP-66
文件頁(yè)數(shù): 12/15頁(yè)
文件大小: 298K
代理商: WSF2816-39H1M
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WSF2816-39XX
FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FWE CONTROLLED
(VCC = 5.0V, TA = -55
°C to +125°C)
Parameter
Symbol
-90
Unit
Min
Max
Write Cycle Time
tAVAV
tWC
90
ns
Chip Select Setup Time
tELWL
tCS
0ns
Write Enable Pulse Width
tWLWH
tWP
45
ns
Address Setup Time
tAVWL
tAS
0ns
Data Setup Time
tDVWH
tDS
45
ns
Data Hold Time
tWHDX
tDH
0ns
Address Hold Time
tWLAX
tAH
45
ns
Chip Select Hold Time
tWHEH
tCH
0ns
Write Enable Pulse Width High
tWHWL
tWPH
20
ns
Duration of Byte Programming Operation (1)
tWHWH1
300
s
Sector Erase Time (2)
tWHWH2
15
sec
Read Recovery Time Before Write
tGHWL
0
s
VCC Set-up Time
tVCS
50
s
Chip Programming Time
11
sec
Output Enable Setup Time
tOES
0ns
Output Enable Hold Time (4)
tOEH
10
ns
Chip Erase Time
64
sec
NOTES:
1. Typical value for tWHWH1 is 7
s.
2. Typical value for tWHWH1 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
4. For Toggle and Data Polling.
FLASH AC CHARACTERISTICS – READ ONLY OPERATIONS
(VCC = 5.0V, TA = -55
°C TO +125°C)
Parameter
Symbol
-90
Unit
Min
Max
Read Cycle Time
tAVAV
tRC
90
ns
Address Access Time
tAVQV
tACC
90
ns
Chip Select Access Time
tELQV
tCE
90
ns
OE to Output Valid
tGLQV
tOE
35
ns
Chip Select to Output High Z (1)
tEHQZ
tDF
20
ns
OE High to Output High Z (1)
tGHQZ
tDF
20
ns
Output Hold from Address, CS or OE Change, whichever is first
tAXQX
tOH
0ns
1. Guaranteed by design, not tested.
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