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參數(shù)資料
| 型號： | WV3EG264M72ESFR265D4-M |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 |
| 封裝： | SO-DIMM-200 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 181K |
| 代理商： | WV3EG264M72ESFR265D4-M |
WV3EG264M72ESFR-D4
August 2005
Rev. 0
ADVANCED
7
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
AC TIMING PARAMETERS
0°C ≤ TCASE < +70°C; VCCQ = +2.5V ± 0.2V, VCC = +2.5V ± 0.2V
Parameter
Symbol
335
262
265
Unit
Min
Max
Min
Max
Min
Max
Mode register set cycle time
tMRD
12
15
ns
DQ & DM setup time to DQS
tDS
0.45
0.5
ns
DQ & DM hold time to DQS
tDH
0.45
0.5
ns
Control & Address input
tIPW
2.2
ns
DQ & DM input pulse width
tDIPW
1.75
ns
Power down exit time
tPDEX
6
7.5
ns
Exit self refresh to non-Read
tXSNR
75
ns
Exit self refresh to read command
tXSRD
200
tCK
Refresh interval time
tREFI
7.8
us
Output DQS valid window
tQH
tHP-tQHS
—tHP-tQHS
—ns
Clock half period
tHP
tCLmin or
tCHmin
—
tCLmin or
tCHmin
—
tCLmin or
tCHmin
—ns
Data hold skew factor
tQHS
0.5
0.75
ns
DQS write postamble time
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Active to Read with Auto precharge
command
tRAP
15
20
Autoprecharge write recovery +
Precharge time
tDAL
(tWR/tCK) +
(tRP/tCK)
(tWR/tCK) +
(tRP/tCK)
(tWR/tCK) +
(tRP/tCK)
tCK
Note: AC specications are based on Micron components. Other DRAM manufacturers specicaitons may be different.
SERIAL PRESENT DETECT INFORMATION
Byte #
Function described
Function Supported
Hex value
265
262
335
265
262
335
0
Denes # of Bytes written into serial memory at module manufacturer
128bytes
80h
1
Total # of Bytes of SPD memory device
256bytes (2K-bit)
08h
2
Fundamental memory type
SDRAM DDR
07h
3
# of row address on this assembly
13
0Dh
4
# of column address on this assembly
11
0Bh
5
# of module Rows on this assembly
2 Row
02h
6
Data width of this assembly
64 bits
48h
7
Data width of this assembly
—
00h
8
VDDQ and interface standard of this assembly
SSTL 2.5V
04h
9
DDR SDRAM cycle time at CAS Latency =2.5
7.5ns
7ns
6ns
75h
70h
60h
10
DDR SDRAM Access time from clock at CL=2.5
±0.75
±0.7
75h
70h
11
DIMM conguration type(Non-parity, Parity, ECC)
ECC
02h
12
Refresh rate & type
7.8us & Self refresh
82h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WV3EG264M72ESFR265D4-S | 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 |
| W1D128M72R8A-5AL-FA1 | 128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 |
| W1D128M72R8A-5AL-FA2 | 128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 |
| W1D128M72R8A-5AP-FA1 | 128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 |
| W1D128M72R8A-5AR-QB2 | 128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WV3EG264M72ESFR265D4-MG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM REGISTERED, w/PLL |
| WV3EG264M72ESFR265D4-SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM REGISTERED, w/PLL |
| WV3EG264M72ESFR335D4-MG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM REGISTERED, w/PLL |
| WV3EG264M72ESFR335D4-SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM REGISTERED, w/PLL |
| WV3EG264M72ESFR-D4 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM REGISTERED, w/PLL |
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