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參數(shù)資料
| 型號： | WV3HG2128M72AER534D6FSG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 259K |
| 代理商： | WV3HG2128M72AER534D6FSG |
WV3HG2128M72AER-D6
November 2006
Rev. 1
ADVANCED*
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
2GB – 2x128Mx72 DDR2 SDRAM REGISTERED, ECC, w/PLL
DESCRIPTION
The WV3HG2128M72AER is a 128Mx72 Double Data
Rate DDR2 SDRAM high density module. This memory
module consists of thirty six 128Mx4 bit with 4 banks DDR
Synchronous DRAMs in FBGA packages, mounted on
240-pin DIMM FR4 substrate.
DDR2 SDRAM modules use double data rate architecture
to achieve high-speed operation. The double data rate
architecture is essentially a 4n-prefetch architecture with
an interface designed to transfer two data words per clock
cycle at the I/O pins.
* This product is under development, is not qualied or characterized and is subject to
change or cancellation without notice.
NOTE: Consult factory for availability of:
Vendor source control options
Industrial temperature options
FEATURES
240-pin, dual in-line memory module
Fast data transfer rates: PC2-4300 and PC2-3200
Utilizes 533 and 400 Mb/s DDR2 SDRAM
components
VCC = VCCQ = 1.8V± 0.1V
VCCSPD = 1.7V to 3.6V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Four-bit prefetch architecture
DLL to align DQ and DQS transitions with CK
Multiple internal device banks for concurrent
operation
Supports duplicate output strobe (RDQS/RDQS#)
Programmable CAS# latency (CL): 3, 4 and 5
Adjustable data-output drive strength
On-die termination (ODT)
Posted CAS# latency: 0, 1, 2, 3 and 4
Serial Presence Detect (SPD) with EEPROM
64ms: 8,192 cycle refresh
Gold edge contacts
Product is lead-free
RoHS compliant
Dual Rank
Package option
240 Pin DIMM
PCB – 29.97mm (1.18") Max
OPERATING FREQUENCIES
PC2-3200
PC2-4200
Clock Speed
200MHz
266MHz
CL-tRCD-tRP
3-3-3
4-4-4
* Consult factory for availability
相關(guān)PDF資料 |
PDF描述 |
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| WS128K32-120G1UQ | 128K X 32 MULTI DEVICE SRAM MODULE, 120 ns, CQMA68 |
| WS512K32V-15G1TMA | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 |
| WV3HG2128M72AER403D6SG | 256M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| 1.5CE27A | 1.5W TRANSIENT SUPPRESSOR |
| 1.5CE27CA | 1.5W TRANSIENT SUPPRESSOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WV3HG2128M72AER534D6MG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL |
| WV3HG2128M72AER534D6SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL |
| WV3HG2128M72AER-D6 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL |
| WV3HG2128M72EEU403AD4MG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM UNBUFFERED, ECC w/PLL |
| WV3HG2128M72EEU403AD4SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2GB - 2x128Mx72 DDR2 SDRAM UNBUFFERED, ECC w/PLL |
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