- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄231499 > WV3HG264M64EEU665D6MG (MICROSEMI CORP-PMG MICROELECTRONICS) 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 PDF資料下載
參數(shù)資料
| 型號(hào)： | WV3HG264M64EEU665D6MG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 |
| 封裝： | ROHS COMPLIANT, DIMM-240 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 668K |
| 代理商： | WV3HG264M64EEU665D6MG |
WV3HG264M64EEU-D6
October 2006
Rev. 1
ADVANCED
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
DC OPERATING CONDITIONS
All Voltages Referenced to VSS
Parameter
Symbol
Rating
Units
Notes
Min.
Type
Max.
Supply Voltage
VCC
1.7
1.8
1.9
V
1
I/O Supply Voltage
VCCQ
1.7
1.8
1.9
V
4
VCCL Supply Voltage
VCCL
1.7
1.8
1.9
V
4
I/O Reference Voltage
VREF
0.49*VCCQ
0.50*VCCQ
0.51*VCCQ
V2
I/O Termination Voltage
VTT
VREF-0.04
VREF
VREF+0.04
V
3
Notes:
1. VCC and VCCQ must track each other. VCCQ must be less than or equal to VCC.
2. VREF is expected to equal VCCQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/- percent of the DC
value. Peak-to-peak AC noise on VREF may not exceed +/-2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
3. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
4. VCCQ tracks with VCC; VCCL track with VCC.
ABSOLUTE MAXIMUM RATINGS
SSTL_1.8V
Symbol
Parameter
Min
Max
Unit
VCC
Voltage on VCC pin relative to VSS
- 1.0
2.3
V
VCCQ
Voltage on VCCQ pin relative to VSS
- 0.5
2.3
V
VCCL
Voltage on VCCL pin relative to VSS
- 0.5
2.3
V
VIN, VOUT
Voltage on any pin relative to VSS
- 0.5
2.3
V
TSTG
Storage Temperature
-55
100
°C
TCASE
Device operating Temperature
0
85
°C
IL
Input leakage current; Any input 0V<VIN<VCC;
VREF input 0V<VIN<<0.95; Other pins not
under test = 0V
Command/Address, RAS#,
CAS#, WE#
-80
80
uA
CS#, CKE
-40
40
uA
CK, CK#
-30
30
uA
DM
-10
10
uA
IOZ
Output leakage current; 0V<VOUT<VCCQ; DQs
and ODT are disable
DQ, DQS, DQS#
-10
10
uA
IVREF
VREF leakage current; VREF = Valid VREF level
-32
32
uA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WV3HG232M72EER534D6MG | 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 |
| WEDPS512K32LV-15BC | 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PBGA143 |
| WMS512K8-100FM | 512K X 8 STANDARD SRAM, 100 ns, CDFP36 |
| WMS512K8-70FC | 512K X 8 STANDARD SRAM, 70 ns, CDFP36 |
| WF256K8-60CI5 | 256K X 8 FLASH 5V PROM MODULE, 60 ns, CDIP32 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WV3HG264M64EEU665D6SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR2 SDRAM UNBUFFERED |
| WV3HG264M64EEU806D4MG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR2 SDRAM UNBUFFERED |
| WV3HG264M64EEU806D4SG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR2 SDRAM UNBUFFERED |
| WV3HG264M64EEU806D6GG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR2 SDRAM UNBUFFERED |
| WV3HG264M64EEU806D6MG | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx64 DDR2 SDRAM UNBUFFERED |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。