參數(shù)資料
型號(hào): X0403MF1AA2
英文描述: 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF3706L with Standard Packaging
中文描述: 晶閘管4.0a上600V的
文件頁數(shù): 1/4頁
文件大?。?/td> 64K
代理商: X0403MF1AA2
X04xxxF
August 1998 Ed : 1A
SENSITIVE GATE SCR
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180
°
conduction angle)
Tc= 90
°
C
4
A
Ta= 25
°
C
1.35
I
T(AV)
Mean on-state current
(180
°
conduction angle)
Tc= 90
°
C
2.5
A
Ta= 25
°
C
0.9
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25
°
C )
tp = 8.3 ms
33
A
tp = 10 ms
30
I
2
t
I
2
t Value for fusing
tp = 10 ms
4.5
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 10 mA di
G
/dt = 0.1 A/
μ
s.
50
A/
μ
s
T
stg
T
j
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
°
C
Tl
Maximum lead temperature for soldering during 10s at
4.5mm from case
260
°
C
ABSOLUTE RATINGS
(limiting values)
I
T(RMS)
= 4A
V
DRM
= 400V to 800V
Low I
GT
< 200
μ
A
FEATURES
Symbol
Parameter
Voltage
Unit
D
M
N
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 125
°
C R
GK
= 1K
400
600
800
V
The X04xxxF series of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where low gate sensitivity is required,
like small engine ignition, SMPS crowbar
protection, food processor.
DESCRIPTION
TO202-3
(Plastic)
K
AG
1/4
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