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參數資料
| 型號： | X20C04JMB |
| 英文描述： | Nonvolatile Static RAM |
| 中文描述： | 非易失性靜態(tài)RAM |
| 文件頁數： | 4/15頁 |
| 文件大小： | 67K |
| 代理商： | X20C04JMB |
X20C04
4
ABSOLUTE MAXIMUM RATINGS*
Temperature under Bias .................. –65
°
C to +135
°
C
Storage Temperature ....................... –65
°
C to +150
°
C
Voltage on any Pin with
Respect to V
SS.......................................
–1V to +7V
D.C. Output Current ...........................................10mA
Lead Temperature (Soldering, 10 seconds)..... 300
°
C
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and the functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability.
D.C. OPERATING CHARACTERISTICS
(Over recommended operating conditions unless otherwise specified.)
Limits
Max.
Symbol
Parameter
Min.
Units
Test Conditions
l
CC1
V
CC
Current (Active)
100
mA
NE
=
WE
= V
IH
,
CE
=
OE
= V
IL
Address Inputs = 0.4V/2.4V levels
@ f = 5MHz. All I/Os = Open
All Inputs = V
IH
All I/Os = Open
CE
= V
IH
All Other Inputs = V
IH
, All I/Os = Open
All Inputs = V
CC
– 0.3V
All I/Os = Open
V
IN
= V
SS
to V
CC
V
OUT
= V
SS
to V
CC
,
CE
= V
IH
I
CC2
V
CC
Current During Store
10
mA
I
SB1
V
CC
Standby Current
(TTL Input)
V
CC
Standby Current
(CMOS Input)
Input Leakage Current
Output Leakage Current
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
10
mA
I
SB2
250
μ
A
I
LI
I
LO
V
IL(1)
V
IH(1)
V
OL
V
OH
10
10
0.8
μ
A
μ
A
V
V
V
V
–1
2
V
CC
+ 0.5
0.4
I
OL
= 2.1mA
I
OH
= –400
μ
A
2.4
3825 PGM T04.3
POWER-UP TIMING
Symbol
Parameter
Max.
Units
μ
s
ms
3825 PGM T05
t
PUR(2)
t
PUW(2)
Power-Up to RAM Operation
Power-Up to Nonvolatile Operation
100
5
Notes:
(1) V
IL
min. and V
IH
max. are for reference only and are not tested.
(2) This parameter is periodically sampled and not 100% tested.
CAPACITANCE
T
A
= +25
°
C, F = 1MHz, V
CC
= 5V.
Symbol
Test
Max.
Units
Conditions
C
I/O(2)
C
IN(2)
Input/Output Capacitance
Input Capacitance
10
6
pF
pF
V
I/O
= 0V
V
IN
= 0V
3825 PGM T06.1
RECOMMENDED OPERATING CONDITIONS
Temperature
Min.
0
°
C
–40
°
C
–55
°
C
Max.
+70
°
C
+85
°
C
+125
°
C
3825 PGM T02.1
Commercial
Industrial
Military
Supply Voltage
Limits
5V
±
10%
X20C04
3825 PGM T03
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相關代理商/技術參數 |
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| X20C04P-15 | 功能描述:IC NVSRAM 4KBIT 150NS 28DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產品目錄頁面:1445 (CN2011-ZH PDF) |
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